Isolated, Half Bridge Gate Driver with
Adjustable Dead Time, 4 A Output
ADuM4221
Data Sheet
FEATURES
4 A peak current (<2 Ω RDSON_x
FUNCTIONAL BLOCK DIAGRAM
)
ADuM4221
2.5 V to 6.5 V logic input voltage
4.5 V to 35 V output supply voltage
UVLO VDD1 positive going threshold: 2.5 V maximum
Multiple UVLO options for VDDA and VDDB positive going
threshold
Grade A: 4.5 V maximum
Grade B: 7.5 V maximum
Grade C: 11.6 V maximum
Precise timing characteristics
V
V
16
15
14
1
2
3
4
5
6
7
8
DDA
OA
UVLO
TSD
IA
IB
V
V
DECODE
AND
ENCODE
LOGIC
GND
V
A
DD1
UVLO
GND
13 NC
12 NC
1
CONTROL
LOGIC
DISABLE
DT
UVLO
TSD
V
11
10
9
DDB
44 ns maximum propagation delay
Adjustable dead time
CMOS input logic levels
DECODE
AND
V
NC
OB
ENCODE
LOGIC
V
GND
DD1
B
High common-mode transient immunity: 150 kV/µs
High junction temperature operation: 125°C
Default low output
NC = NO CONNECT
Figure 1.
Safety and regulatory approvals (pending)
UL recognition per UL 1577
5700 V rms for 1 minute duration
CSA Component Acceptance Notice 5A (pending)
VDE certificate of conformity (pending)
DIN V VDE V 0884-11
GENERAL DESCRIPTION
The ADuM4221 is a 4 A isolated, half bridge gate driver that
employs the Analog Devices, Inc., iCoupler® technology to
provide independent and isolated high-side and low-side outputs.
The ADuM4221 provides 5700 V rms isolation in the increased
creepage wide body, 16-lead SOIC_IC package. Combining
high speed CMOS and monolithic transformer technology,
these isolation components provide outstanding performance
characteristics superior to the alternatives, such as the
combination of pulse transformers and gate drivers.
V
IORM = 849 V peak
Increased creepage wide body, 16-lead SOIC_IC
APPLICATIONS
Switching power supplies
Isolated IGBT/MOSFET gate drives
Industrial inverters
Gallium nitride (GaN)/silicon carbide (SiC) compatible
The isolators operate with a logic input voltage ranging from
2.5 V to 6.5 V, providing compatibility with lower voltage systems.
In comparison to gate drivers employing high voltage level
translation methodologies, the ADuM4221 offers the benefit of
true, galvanic isolation between the input and each output.
The ADuM4221 has a built in overlap protection and allows for
dead time adjustment. A single resistor between the dead time
pin (DT) and the GND1 pin sets the dead time on the secondary
side between the high-side and the low-side outputs.
An internal thermal shutdown (TSD) sets outputs low if the
internal temperature on the ADuM4221 exceeds the TSD
temperature. As a result, the ADuM4221 provides reliable
control over the switching characteristics of the insulated gate
bipolar transistor (IGBT)/metal-oxide semiconductor field
effect transistor (MOSFET) configurations over a wide range of
positive or negative switching voltages.
1 Protected by U.S. Patents 5,952,849; 6,873,065; 7,075,239. Other patents pending.
Rev. 0
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