Datasheet > ADR360N65AS-Q1

ADR360N65AS-Q1

更新时间： 2025-09-04 20:01:39

品牌	Logo	应用领域
安邦半导体 - ANBON		/
页数	文件大小	规格书
5页	1032K
描述
TO-252AB

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ADR360N65AS-Q1 数据手册

ADR360N65AS-Q1

N-Channel Super Junction Power MOSFET

Product Summary

V_(BR)DSS

R_DS(on)MAX

I_D

650V

360mΩ@10V

11.5A

Feature

Application



New technology for high voltage device



Power factor correction（PFC）

Low on-resistance and low conduction losses

Ultra Low Gate Charge cause lower driving

requirements



Switched mode power supplies(SMPS)

Uninterruptible Power Supply（UPS）



Suffix "-Q1" for AEC-Q101

Package

Circuit diagram

TO-252AB

Marking

DR360N65A

XXXXX

Document ID

AS-1150638

Issued Date

2018/03/08

Revised Date

2025/04/08

Revision

Page.

Page 1

12 3 4 5

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