1517-250M

更新时间： 2024-01-27 10:48:03

品牌	Logo	应用领域
ADPOW		晶体晶体管雷达
页数	文件大小	规格书
4页	111K
描述
250 Watts, 40 Volts, 200us, 10% Radar 1480 to 1650 MHz

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技术参数
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1517-250M 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-CDFM-F2
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.84
Is Samacsys：	N	其他特性：	HIGH RELIABILITY
最大集电极电流 (IC)：	20 A	集电极-发射极最大电压：	70 V
配置：	SINGLE	最高频带：	L BAND
JESD-30 代码：	R-CDFM-F2	JESD-609代码：	e0
元件数量：	1	端子数量：	2
最高工作温度：	200 °C	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN LEAD	端子形式：	FLAT
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管元件材料：	SILICON	Base Number Matches：	1

1517-250M 数据手册

1517-250M

250 Watts, 40 Volts, 200µs, 10%

Radar 1480 to 1650 MHz

GENERAL DESCRIPTION

CASE OUTLINE

55ST-1

The 1517-250M is an internally matched, COMMON BASE transistor capable

of providing 250 Watts of pulsed RF output power at 200 microseconds pulse

width, 10% duty factor across the band 1480 to 1650 MHz. This hermetically

solder-sealed transistor is specifically designed for upper L-Band radar

applications. It utilizes gold metallization and diffused emitter ballasting to

provide high reliability and supreme ruggedness.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation

Device Dissipation @25°C¹

700 W

Maximum Voltage and Current

Collector to Base Voltage (BV_CES

)

70 V

3 V

Emitter to Base Voltage (BV_EBO

)

Collector Current (I_C)

20 A

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

-65 to +200 °C

+200 °C

FUNCTIONAL CHARACTERISTICS @ 25°C

SYMBOL CHARACTERISTICS

TEST CONDITIONS

MIN TYP MAX UNITS

P_out

P_g

Power Output

F = 1480-1650 MHz

250

7.0

280

350

8.5

_CC= 40 Volts

Pin = 50 W

Power Gain

Collector Efficiency

Input Return Loss

η_c

IR_L

Pulse Width = 200µs

Duty Factor = 10%

VSWR¹

Pulse Droop

0.5

Load Mismatch Tolerance

F=1480 MHz, Pin = 50W

3.0:1

ELECTRICAL CHARACTERISTICS @ 25°C

I_EBO

BV_CES

h_FE

θjc¹

Emitter Cutoff Current

V_EB= 3 V

Collector to Emitter Breakdown I_C= 100 mA

DC – Current Gain

Thermal Resistance

V_CE= 5V, I_c= 1A

0.25

°C/W

NOTES: 1. Pulse condition of 200µsec, 10%

Issue Jan 2006

ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION

PLEASE CHECK OUR WEB SITE AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT.

Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

12 3 4

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