生命周期: | Active | 包装说明: | O-CEMW-N2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.60 | 风险等级: | 5.7 |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | MIXER DIODE | 频带: | X BAND |
JESD-30 代码: | O-CEMW-N2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
最低工作温度: | -65 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | ROUND | 封装形式: | MICROWAVE |
脉冲输入最大功率: | 0.1 W | 认证状态: | Not Qualified |
表面贴装: | YES | 技术: | SCHOTTKY |
端子形式: | NO LEAD | 端子位置: | END |
肖特基势垒类型: | LOW BARRIER | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ADP9002-23 | ASI |
获取价格 |
Mixer Diode, Low Barrier, X Band, 1800ohm Z(V) Max, Silicon, | |
ADP9002-44 | ASI |
获取价格 |
Mixer Diode, Low Barrier, X Band, Silicon, | |
ADP9002-51 | ASI |
获取价格 |
Mixer Diode, Low Barrier, X Band, Silicon, | |
ADP9002-800 | ASI |
获取价格 |
Mixer Diode, Low Barrier, X Band, Silicon, | |
ADP9002-860 | ASI |
获取价格 |
Mixer Diode, Low Barrier, X Band, Silicon, | |
ADP9002-91 | ASI |
获取价格 |
Mixer Diode, Low Barrier, X Band, Silicon, | |
ADP9003 | ASI |
获取价格 |
Diode, | |
ADP9003-00 | ASI |
获取价格 |
Mixer Diode, Low Barrier, X Band, Silicon, DIE-9 | |
ADP9003-01 | ASI |
获取价格 |
Mixer Diode, Low Barrier, X Band, 1800ohm Z(V) Max, Silicon, | |
ADP9003-19 | ASI |
获取价格 |
Mixer Diode, Low Barrier, X Band, Silicon, |