是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SOIC |
包装说明: | SOIC-8 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | 风险等级: | 1.78 |
Samacsys Description: | MOSFET Driver High/Low Side Inv/Non-Inv | 高边驱动器: | YES |
接口集成电路类型: | AND GATE BASED MOSFET DRIVER | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e3 | 长度: | 4.9 mm |
湿度敏感等级: | 1 | 功能数量: | 1 |
端子数量: | 8 | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | SOP | 封装等效代码: | SOP8,.25 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 电源: | 12 V |
认证状态: | Not Qualified | 座面最大高度: | 1.75 mm |
子类别: | MOSFET Drivers | 最大供电电压: | 13.2 V |
最小供电电压: | 4.15 V | 标称供电电压: | 12 V |
表面贴装: | YES | 温度等级: | INDUSTRIAL |
端子面层: | MATTE TIN | 端子形式: | GULL WING |
端子节距: | 1.27 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 断开时间: | 0.035 µs |
接通时间: | 0.07 µs | 宽度: | 3.9 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
ADP3650JRZ-RL | ADI | Dual, Bootstrapped, 12 V MOSFET Driver with Output Disable |
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ADP3650JRZ-RL | ROCHESTER | AND GATE BASED MOSFET DRIVER, PDSO8, ROHS COMPLIANT, MS-012AA, SOIC-8 |
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ADP3654 | ADI | High Speed, Dual, 4 A MOSFET Driver |
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ADP3654ARDZ-R7 | ADI | High Speed, Dual, 4 A MOSFET Driver |
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ADP3654ARDZ-RL | ADI | High Speed, Dual, 4 A MOSFET Driver |
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ADP3654ARHZ | ADI | High Speed, Dual, 4 A MOSFET Driver |
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