Datasheet > ADN3010-11-50A-RL7

ADN3010-11-50A-RL7

更新时间： 2024-02-18 21:37:05

品牌	Logo	应用领域
亚德诺 - ADI		通信放大器光纤
页数	文件大小	规格书
10页	193K
描述
11.3 Gbps Optical Receiver

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ADN3010-11-50A-RL7 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Lifetime Buy	针数：	0
Reach Compliance Code：	compliant	风险等级：	5.6
主体宽度：	0.675 mm	主体高度：	0.245 mm
主体长度或直径：	0.835 mm	内置特性：	AMPLIFIER, PIN PHOTODIODE
通信标准：	SONET	数据速率：	1412.5 Mbps
光纤设备类型：	RECEIVER	光纤类型：	SMF
安装特点：	SURFACE MOUNT	最高工作温度：	85 °C
最低工作温度：	-40 °C	最大工作波长：	1565 nm
最小工作波长：	850 nm	标称工作波长：	1310 nm
包装方法：	TR	灵敏度：	-16.5 dBm
最大供电电压：	3.6 V	最小供电电压：	3 V
标称供电电压：	3.3 V	表面贴装：	YES
Base Number Matches：	1

ADN3010-11-50A-RL7 数据手册

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11.3 Gbps Optical Receiver

Data Sheet

ADN3010-11

FEATURES

FUNCTIONAL BLOCK DIAGRAM

VCC

Integrated SiGe PIN photodiode, transimpedance amplifier

(TIA), and limiting amplifier (LA)

ADN3010-11

Power monitor output: 1.0 A/W at O band wavelengths

50 µm diameter germanium photodiode

Input sensitivity

50Ω

OUT+

OUT–

_OMA= −16.5 dBm

_AVE= −17.3 dBm (ER = 6 dB)

PRBS31 at 10.52 Gbps, BER = 10⁻¹², λ = 1270 nm, 1290 nm,

1300 nm, 1310 nm, and 1330 nm

Antireflective coating (ARC) optimized to 1310 nm

Single 3.3 V supply

POWER

MONITOR

Power dissipation: 102 mW

Differential output swing: 460 mV p-p

On-chip power monitor function

GND

Figure 1.

Die size: 0.835 mm × 0.675 mm

APPLICATIONS

Optical module receivers up to 11.3 Gbps

Short range 10 Gb SONET, FC, Ethernet, CPRI, OBSAI, and LTE

optical receivers

Capable to be in ROSA, BOSA, or MCM packages

GENERAL DESCRIPTION

The ADN3010-11 is a high speed optical receiver featuring a

proprietary large area germanium photodiode monolithically

integrated with a silicon TIA and LA. The integration of the

photodiode eliminates bond wires between the diode and the

TIA that provides guaranteed performance and improved

manufacturing reliability. The 50 µm diameter photodetector

enables an easy optical coupling design when aligned with a

single mode fiber (SMF). With a 1310 nm optimized ARC, the

ADN3010-11 supports 10GBASE-LR and other applications

with extended data rates of up to 11.3 Gbps.

(O band) wavelengths (1270 nm, 1290 nm, 1300 nm, 1310 nm,

and 1330 nm) in this data sheet.

The power monitor pin provides either an output voltage or

current that is proportional to the sensed average photocurrent.

Typical power consumption of the ADN3010-11 is 102 mW

from a single 3.3 V supply. When the output is saturated, it has

a typical differential amplitude of 460 mV p-p at 10.52 Gbps.

The ADN3010-11 is available in die form, and it is operational

over the extended industrial temperature range of −40°C to

+85°C.

Although the ADN3010-11 can operate in the wavelength range

from 850 nm to 1565 nm, it has an antireflective coating (ARC)

centered at 1310 nm and is characterized only at original band

Rev. A

Document Feedback

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rightsof third parties that may result fromits use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks andregisteredtrademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Technical Support

www.analog.com

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