11.3 Gbps Optical Receiver
Data Sheet
ADN3010-11
FEATURES
FUNCTIONAL BLOCK DIAGRAM
VCC
VCC
Integrated SiGe PIN photodiode, transimpedance amplifier
(TIA), and limiting amplifier (LA)
ADN3010-11
Power monitor output: 1.0 A/W at O band wavelengths
50 µm diameter germanium photodiode
Input sensitivity
50Ω
50Ω
OUT+
OUT–
P
OMA = −16.5 dBm
P
AVE = −17.3 dBm (ER = 6 dB)
PRBS31 at 10.52 Gbps, BER = 10−12, λ = 1270 nm, 1290 nm,
1300 nm, 1310 nm, and 1330 nm
Antireflective coating (ARC) optimized to 1310 nm
Single 3.3 V supply
POWER
MONITOR
PM
Power dissipation: 102 mW
Differential output swing: 460 mV p-p
On-chip power monitor function
GND
Figure 1.
Die size: 0.835 mm × 0.675 mm
APPLICATIONS
Optical module receivers up to 11.3 Gbps
Short range 10 Gb SONET, FC, Ethernet, CPRI, OBSAI, and LTE
optical receivers
Capable to be in ROSA, BOSA, or MCM packages
GENERAL DESCRIPTION
The ADN3010-11 is a high speed optical receiver featuring a
proprietary large area germanium photodiode monolithically
integrated with a silicon TIA and LA. The integration of the
photodiode eliminates bond wires between the diode and the
TIA that provides guaranteed performance and improved
manufacturing reliability. The 50 µm diameter photodetector
enables an easy optical coupling design when aligned with a
single mode fiber (SMF). With a 1310 nm optimized ARC, the
ADN3010-11 supports 10GBASE-LR and other applications
with extended data rates of up to 11.3 Gbps.
(O band) wavelengths (1270 nm, 1290 nm, 1300 nm, 1310 nm,
and 1330 nm) in this data sheet.
The power monitor pin provides either an output voltage or
current that is proportional to the sensed average photocurrent.
Typical power consumption of the ADN3010-11 is 102 mW
from a single 3.3 V supply. When the output is saturated, it has
a typical differential amplitude of 460 mV p-p at 10.52 Gbps.
The ADN3010-11 is available in die form, and it is operational
over the extended industrial temperature range of −40°C to
+85°C.
Although the ADN3010-11 can operate in the wavelength range
from 850 nm to 1565 nm, it has an antireflective coating (ARC)
centered at 1310 nm and is characterized only at original band
Rev. A
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