ADG936BCPZ

更新时间： 2024-11-25 12:58:11

品牌	Logo	应用领域
亚德诺 - ADI		光电二极管
页数	文件大小	规格书
16页	502K
描述
Wideband 4 GH z, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT

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替代型号

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ADG936BCPZ 数据手册

Wideband 4 GHz, 36 dB Isolation at 1 GHz,

CMOS 1.65 V to 2.75 V, Dual SPDT

ADG936/ADG936-R

FEATURES

FUNCTIONAL BLOCK DIAGRAMS

Wideband switch: −3 dB @ 4 GHz

ADG936 absorptive dual SPDT

ADG936-R reflective dual SPDT

High off isolation (36 dB @ 1 GHz)

Low insertion loss (0.9 dB dc to 1 GHz)

Single 1.65 to 2.75 V power supply

CMOS/LVTTL control logic

RF1A

RF2A

RF1B

RF2B

RF1A

RF2A

RF1B

RF2B

RFCA

INA

RFCA

INA

50Ω

ADG936-R

50Ω

ADG936

20-lead TSSOP and 4 mm × 4 mm LFCSP package

Low power consumption (1 µA max)

RFCB

INB

RFCB

INB

APPLICATIONS

50Ω

Wireless communications

General-purpose RF switching

Dual-band applications

High speed filter selection

Digital transceiver front end switch

IF switching

50Ω

Figure 1.

Figure 2.

Tuner modules

Antenna diversity switching

GENERAL DESCRIPTION

LVTTL compatible. The low power consumption of these

CMOS devices makes them ideally suited for wireless

applications and general-purpose high frequency switching.

The ADG936/ADG936-R are wideband analog switches that

comprise two independently selectable SPDT switches using a

CMOS process to provide high isolation and low insertion loss

to 1 GHz. The ADG936 is an absorptive/matched dual SPDT

with 50 Ω terminated shunt legs; the ADG936-R is a reflective

dual SPDT. These devices are designed such that the isolation is

high over the dc to 1 GHz frequency range. They have on-board

CMOS control logic, eliminating the need for external

PRODUCT HIGHLIGHTS

1. –36 dB off isolation @ 1 GHz.

2. 0.9 dB insertion loss @ 1 GHz.

3. 20-lead TSSOP and 4 mm × 4 mm LFCSP package.

controlling circuitry. The control inputs are both CMOS and

–10

–0.3

–0.4

–0.5

–0.6

–0.7

–0.8

–0.9

–1.0

–1.1

–1.2

–1.3

–1.4

–1.5

–1.6

–1.7

–1.8

–1.9

–2.0

–2.1

–2.2

–2.3

–2.4

–2.5

–2.6

–2.7

–2.8

–2.9

–3.0

= 2.5V

= 25°C

–20

–30

–40

–50

–60

–70

–80

= 2.5V

S21

S12

= 25°C

10k

100k

10M

100M

10G

10k

100k

10M

100M

10G

FREQUENCY (Hz)

Figure 3. Off Isolation vs. Frequency

Figure 4. Insertion Loss vs. Frequency

Rev. 0

Information furnished by Analog Devices is believed to be accurate and reliable.

However, no responsibility is assumed by Analog Devices for its use, nor for any

infringements of patents or other rights of third parties that may result from its use.

Specifications subject to change without notice. No license is granted by implication

or otherwise under any patent or patent rights of Analog Devices. Trademarks and

registered trademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

Fax: 781.326.8703

www.analog.com

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ADG936BCPZ 替代型号

型号	品牌	替代类型	描述	数据表
ADG936BRU	ADI	完全替代	Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT
ADG936BCP-R-REEL	ADI	完全替代	Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT

与ADG936BCPZ相关器件

型号	品牌	获取价格	描述	数据表
ADG936BCPZ-R	ADI	获取价格	暂无描述
ADG936BCPZ-REEL	ADI	获取价格	IC DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, QCC20, 4 X 4 MM, LEAD FREE, MO-220VGGD-1,
ADG936BCPZ-REEL7	ADI	获取价格	IC DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, QCC20, 4 X 4 MM, LEAD FREE, MO-220VGGD-1,
ADG936BCPZ-RL	ADI	获取价格	Wideband 4 GH z, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT
ADG936BCPZ-RL7	ADI	获取价格	Wideband 4 GH z, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT
ADG936BCPZ-RL7	ROCHESTER	获取价格	DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, QCC20, 4 X 4 MM, ROHS COMPLIANT, MO-220VGGD-
ADG936BCPZ-R-REEL	ADI	获取价格	DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, QCC20, 4 X 4 MM, ROHS COMPLIANT, MO-220VGGD-
ADG936BRU	ADI	获取价格	Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT
ADG936BRU-500RL7	ADI	获取价格	Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT
ADG936BRU-R	ADI	获取价格	Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT

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