Datasheet > ADG636YRU-REEL7

ADG636YRU-REEL7

更新时间： 2024-11-26 14:47:39

品牌	Logo	应用领域
亚德诺 - ADI		光电二极管
页数	文件大小	规格书
16页	243K
描述
IC DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, PDSO14, TSSOP-14, Multiplexer or Switch

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ADG636YRU-REEL7 数据手册

1 pC Charge Injection, 100 pA Leakage,

CMOS, ± ± ꢀV/± ꢀV/+ ꢀ ꢁDaꢂ Sꢃꢁꢄ Sꢅitch

AꢁG6+6

FEATURES

FUNCTIONAL BLOCK DIAGRAM

1 pC charge injection

ADG636

S1A

±2.7 V to ±±.± V dual supply

+2.7 V to +±.± V single supply

Automotive temperature range: −40°C to +12±°C

100 pA (maximum at 2±°C) leakage currents

8± Ω typical on resistance

S1B

S2A

S2B

Rail-to-rail operation

Fast switching times

LOGIC

Typical power consumption (<0.1 μW)

TTL-/CMOS-compatible inputs

14-lead TSSOP package

Figure 1.

APPLICATIONS

Automatic test equipment

Data acquisition systems

Battery-powered instruments

Communication systems

Sample-and-hold systems

Remote-powered equipment

Audio and video signal routing

Relay replacement

Avionics

GENERAL DESCRIPTION

PRODUCT HIGHLIGHTS

The ADG636 is a monolithic device, comprising two indepen-

dently selectable CMOS single pole, double throw (SPDT)

switches. When on, each switch conducts equally well in both

directions.

ꢂ. Ultralow charge injection. Q_INJ: ±ꢂ.5 pC typical over the

full signal range.

±. Leakage current <0.±5 nA maximum at 85°C.

3. Dual ±±.ꢀ ꢁ to ±5 ꢁ or single +±.ꢀ ꢁ to +5.5 ꢁ supply.

4. Automotive temperature range: −40°C to +ꢂ±5°C.

5. Small ꢂ4-lead TSSOP package.

The ADG636 operates from a dual ±±.ꢀ ꢁ to ±5.5 ꢁ supply, or

from a single supply of +±.ꢀ ꢁ to +5.5 ꢁ.

This switch offers ultralow charge injection of ±ꢂ.5 pC over the

entire signal range and leakage current of ꢂ0 pA typical at ±5°C.

In addition, it offers on resistance of 85 Ω typical, which is matched

to within ± Ω between channels. The ADG636 also has low power

dissipation yet is capable of high switching speeds.

The ADG636 exhibits break-before-make switching action and

is available in a ꢂ4-lead TSSOP package.

Rev. B

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rights of third parties that may result from its use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks and registeredtrademarks arethe property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

www.analog.com

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ADG636YRU-REEL7 替代型号

型号	品牌	替代类型	描述	数据表
ADG636YRUZ	ADI	完全替代	1 pC Charge Injection, 100 pA Leakage, CMOS,

与ADG636YRU-REEL7相关器件

型号	品牌	获取价格	描述	数据表
ADG636YRUZ	ADI	获取价格	1 pC Charge Injection, 100 pA Leakage, CMOS,
ADG636YRUZ1	ADI	获取价格	1 pC Charge Injection, 100 pA Leakage, CMOS,
ADG636YRUZ-REEL1	ADI	获取价格	1 pC Charge Injection, 100 pA Leakage, CMOS,
ADG636YRUZ-REEL71	ADI	获取价格	1 pC Charge Injection, 100 pA Leakage, CMOS,
ADG6412	ADI	获取价格	0.5 Ω RON、±20 V、+36 V 四路 SPST 开关
ADG658	ADI	获取价格	+3 V/+5 V/【5 V CMOS 4-/8-Channel Analog Multi
ADG658_09	ADI	获取价格	3 V/5 V/Â±5 V CMOS 4- and 8-Channel Analog Mu
ADG658_15	ADI	获取价格	Analog Multiplexers
ADG658TRUZ-EP	ADI	获取价格	+3V/+5V/± 5V CMOS 8-Channel Analog Multiplexe
ADG658YCP	ADI	获取价格	+3 V/+5 V/【5 V CMOS 4-/8-Channel Analog Multi

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