ADG636YRU

更新时间： 2024-11-25 22:13:39

品牌	Logo	应用领域
亚德诺 - ADI		开关光电二极管
页数	文件大小	规格书
12页	149K
描述
1 pC Charge Injection, 100 pA Leakage CMOS 5 V/+5 V/+3 V Dual SPDT Switch

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

ADG636YRU 数据手册

1 pC Charge Injection, 100 pA Leakage

CMOS ꢀ5 V/+5 V/+3 V Dual SPDT Switch

ADG636

FEATURES

FUNCTIONAL BLOCK DIAGRAM

1 pC Charge Injection

ꢀ2.7 V to ꢀ5.5 V Dual Supply

+2.7 V to +5.5 V Single Supply

Automotive Temperature Range: –40ꢁC to +125ꢁC

100 pA (Max @ 25ꢁC) Leakage Currents

85 ꢂ Typ On Resistance

ADG636

S1A

S1B

S2A

S2B

Rail-to-Rail Operation

Fast Switching Times

Typical Power Consumption (<0.1 ꢃW)

TTL/CMOS Compatible Inputs

14-Lead TSSOP Package

LOGIC

APPLICATIONS

Automatic Test Equipment

Data Acquisition Systems

Battery-Powered Instruments

Communication Systems

Sample-and-Hold Systems

Remote Powered Equipment

Audio and Video Signal Routing

Relay Replacement

Avionics

GENERAL DESCRIPTION

PRODUCT HIGHLIGHTS

The ADG636 is a monolithic device, comprising two independently

selectable CMOS SPDT (Single Pole, Double Throw) switches.

When on, each switch conducts equally well in both directions.

1. Ultralow Charge Injection (Q_INJ

signal range)

: 1.5 pC typ over full

2. Leakage Current <0.25 nA max @ 85°C

3. Dual 2.7 V to 5 V or Single +2.7 V to +5.5 V Supply

4. Automotive Temperature Range: –40°C to +125°C

5. Small 14-Lead TSSOP Package

The ADG636 operates from a dual 2.7 V to 5.5 V supply, or

from a single supply of +2.7 V to +5.5 V.

This switch offers ultralow charge injection of 1.5 pC over the

entire signal range and leakage current of 10 pA typical at 25°C.

It offers on-resistance of 85 Ω typ, which is matched to within

2 Ω between channels. The ADG636 also has low power dissi-

pation yet gives high switching speeds.

The ADG636 exhibits break-before-make switching action and

is available in a 14-lead TSSOP package.

REV. 0

Information furnished by Analog Devices is believed to be accurate and

reliable. However, no responsibility is assumed by Analog Devices for its

use, norforanyinfringementsofpatentsorotherrightsofthirdpartiesthat

may result from its use. No license is granted by implication or otherwise

under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781/329-4700

Fax: 781/326-8703

www.analog.com

12 3 4 5 6 7...12

中文翻译

下载PDF

ADG636YRU 替代型号

型号	品牌	替代类型	描述	数据表
ADG636YRU-REEL7	ADI	完全替代	IC DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, PDSO14, TSSOP-14, Multiplexer or Switch
ADG636YRUZ	ADI	完全替代	1 pC Charge Injection, 100 pA Leakage, CMOS,

与ADG636YRU相关器件

型号	品牌	获取价格	描述	数据表
ADG636YRU-REEL	ADI	获取价格	1 pC Charge Injection, 100 pA Leakage, CMOS,
ADG636YRU-REEL7	ADI	获取价格	IC DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, PDSO14, TSSOP-14, Multiplexer or Switch
ADG636YRUZ	ADI	获取价格	1 pC Charge Injection, 100 pA Leakage, CMOS,
ADG636YRUZ1	ADI	获取价格	1 pC Charge Injection, 100 pA Leakage, CMOS,
ADG636YRUZ-REEL1	ADI	获取价格	1 pC Charge Injection, 100 pA Leakage, CMOS,
ADG636YRUZ-REEL71	ADI	获取价格	1 pC Charge Injection, 100 pA Leakage, CMOS,
ADG6412	ADI	获取价格	0.5 Ω RON、±20 V、+36 V 四路 SPST 开关
ADG658	ADI	获取价格	+3 V/+5 V/【5 V CMOS 4-/8-Channel Analog Multi
ADG658_09	ADI	获取价格	3 V/5 V/Â±5 V CMOS 4- and 8-Channel Analog Mu
ADG658_15	ADI	获取价格	Analog Multiplexers

与ADG636YRU相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

45
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

62
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

59

产品中心

服务支持

精选活动

关于我们

帮助中心

ADG636YRU

ADG636YRU 数据手册

ADG636YRU 替代型号

与ADG636YRU相关器件

与ADG636YRU相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

ADG636YRU

ADG636YRU 数据手册

ADG636YRU 替代型号

与ADG636YRU相关器件

与ADG636YRU相关文章

您还可以找

您在本页遇到什么问题？