Datasheet > ADET-5000-TR1

ADET-5000-TR1

更新时间： 2022-04-21 04:12:56

品牌	Logo	应用领域
安华高科 - AVAGO		/
页数	文件大小	规格书
6页	257K
描述
RF Power Detector

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ADET-5000-TR1 数据手册

ADET-5000

RF Power Detector

Data Sheet

Description

Features

ADET-5000 is a wide bandwidth, wide dynamic range  Fully Temperature and Voltage Compensated Diode RF

temperature-compensated diode power detector for

operation from 700 MHz to 2.6 GHz. Its high sensitivity

and wide bandwidth support fast inner-loop calibration

and true envelope sampling of modulated signals for

Detector

 -20 dBm to 11 dBm Power Detection Range

 Small, Thin Package (1.2 x 1.5 x 0.5 mm)

accurate power leveling of modulated waveforms for use  Complete coverage of 3GPP bands from 700-2600 MHz

in cellular handsets and data cards.

 Fast Response Time and Wide Bandwidth

ADET-5000 features circuit technology that is aligned

optimally to work with transceivers requiring external

detection for inner-loop power control. Superb tem-

perature and voltage compensation maintains inner-

loop accuracy over extreme operating conditions. In

power-down mode, ADET-5000 presents high output

impedance to the transceiver, minimizing loading of any

other detectors connected to the transceiver detector

input line. This characteristic allows the customer to utilize

ADET-5000 to daisy-chain numerous power ampliﬁer

couplers together with a single detector.

 High Sensitivity and User-Adjustable Input Range

 High Output Impedance in Power Down Mode

 Low Harmonic Generation

 6-pin surface mounting package

 Lead-free, RoHS compliant, Green (Halogen Free)

Applications

 CDMA/UMTS/LTE Handsets & Data Cards

ADET-5000’s nominal input impedance is 100 ohms,

allowing the sensitivity and detection range to be

trimmed externally with a shunt input resistor. This allows

user-adjustability of eﬀective coupling ratios to maximize

dynamic range and to compensate variable output

power targets and daisy-chain conﬁgurations. ADET-5000

is manufactured on an advanced InGaP HBT (hetero-

junction Bipolar Transistor) MMIC (microwave monolithic

integrated circuit) technology oﬀering state-of-the-art

reliability, temperature stability and ruggedness

12 3 4 5 6

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