ADC12L066
www.ti.com
SNAS153I –NOVEMBER 2001–REVISED MARCH 2013
ADC12L066 12-Bit, 66 MSPS, 450 MHz Bandwidth A/D Converter with Internal Sample-and-
Hold
Check for Samples: ADC12L066
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FEATURES
DESCRIPTION
The ADC12L066 is a monolithic CMOS analog-to-
digital converter capable of converting analog input
signals into 12-bit digital words at 66 Megasamples
per second (Msps), minimum, with typical operation
possible up to 80 Msps. This converter uses a
differential, pipeline architecture with digital error
correction and an on-chip sample-and-hold circuit to
minimize die size and power consumption while
providing excellent dynamic performance. A unique
sample-and-hold stage yields a full-power bandwidth
of 450 MHz. Operating on a single 3.3V power
supply, this device consumes just 357 mW at 66
Msps, including the reference current. The Power
Down feature reduces power consumption to just 50
mW.
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Single Supply Operation
Low Power Consumption
Power Down Mode
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On-Chip Reference Buffer
APPLICATIONS
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Ultrasound and Imaging
Instrumentation
Cellular Base Stations/Communications
Receivers
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Sonar/Radar
xDSL
Wireless Local Loops
Data Acquisition Systems
DSP Front Ends
The differential inputs provide a full scale input swing
equal to ±VREF with the possibility of a single-ended
input. Full use of the differential input is
recommended for optimum performance. For ease of
use, the buffered, high impedance, single-ended
reference input is converted on-chip to a differential
reference for use by the processing circuitry. Output
data format is 12-bit offset binary.
KEY SPECIFICATIONS
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Resolution: 12 Bits
Conversion Rate: 66 Msps
This device is available in the 32-lead LQFP package
and will operate over the industrial temperature range
of −40°C to +85°C. An evaluation board is available
to facilitate the evaluation process.
Full Power Bandwidth: 450 MHz
DNL: ±0.4 LSB (typ)
SNR (fIN = 10 MHz): 66 dB (typ)
SFDR (fIN = 10 MHz): 80 dB (typ)
Data Latency: 6 Clock Cycles
Supply Voltage: +3.3V ± 300 mV
Power Consumption, 66 MHz: 357 mW (typ)
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
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All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2001–2013, Texas Instruments Incorporated