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ADC10DV200CISQ PDF预览

ADC10DV200CISQ

更新时间: 2024-11-25 06:36:19
品牌 Logo 应用领域
美国国家半导体 - NSC 转换器
页数 文件大小 规格书
24页 518K
描述
Dual 10-bit, 200 MSPS Low-Power A/D Converter with Parallel LVDS/CMOS Outputs

ADC10DV200CISQ 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:HVQCCN, LCC60,.35SQ,20Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.35转换器类型:ADC, PROPRIETARY METHOD
JESD-30 代码:S-XQCC-N60长度:9 mm
最大线性误差 (EL):0.0898%湿度敏感等级:1
模拟输入通道数量:2位数:10
功能数量:1端子数量:60
最高工作温度:85 °C最低工作温度:-40 °C
输出位码:OFFSET BINARY, 2'S COMPLEMENT BINARY输出格式:PARALLEL, WORD
封装主体材料:UNSPECIFIED封装代码:HVQCCN
封装等效代码:LCC60,.35SQ,20封装形状:SQUARE
封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度(摄氏度):225
电源:1.8 V认证状态:Not Qualified
采样速率:200 MHz采样并保持/跟踪并保持:SAMPLE
座面最大高度:0.8 mm子类别:Analog to Digital Converters
标称供电电压:1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:NO LEAD端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:9 mmBase Number Matches:1

ADC10DV200CISQ 数据手册

 浏览型号ADC10DV200CISQ的Datasheet PDF文件第2页浏览型号ADC10DV200CISQ的Datasheet PDF文件第3页浏览型号ADC10DV200CISQ的Datasheet PDF文件第4页浏览型号ADC10DV200CISQ的Datasheet PDF文件第5页浏览型号ADC10DV200CISQ的Datasheet PDF文件第6页浏览型号ADC10DV200CISQ的Datasheet PDF文件第7页 
February 5, 2009  
ADC10DV200  
Dual 10-bit, 200 MSPS Low-Power A/D Converter with  
Parallel LVDS/CMOS Outputs  
General Description  
Features  
The ADC10DV200 is a monolithic analog-to-digital converter  
capable of converting two analog input signals into 10-bit dig-  
ital words at rates up to 200 Mega Samples Per Second  
(MSPS). The digital output mode is selectable and can be ei-  
ther differential LVDS or CMOS signals. This converter uses  
a differential, pipelined architecture with digital error correc-  
tion and an on-chip sample-and-hold circuit to minimize die  
size and power consumption while providing excellent dy-  
namic performance. A unique sample-and-hold stage yields  
a full-power bandwidth of 900MHz. Fabricated in core CMOS  
process, the ADC10DV200 may be operated from a single  
1.8V power supply. The ADC10DV200 achieves approxi-  
mately 9.6 effective bits at Nyquist and consumes just 280mW  
at 170MSPS in CMOS mode and 450mW at 200MSPS in  
LVDS mode. The power consumption can be scaled down  
further by reducing sampling rates.  
Single 1.8V power supply operation.  
Power scaling with clock frequency.  
Internal sample-and-hold.  
Internal or external reference.  
Power down mode.  
Offset binary or 2's complement output data format.  
LVDS or CMOS output signals.  
60-pin LLP package, (9x9x0.8mm, 0.5mm pin-pitch)  
Clock Duty Cycle Stabilizer.  
IF Sampling Bandwidth > 900MHz.  
Key Specifications  
Resolution  
Conversion Rate  
ENOB  
SNR  
SINAD  
10 Bits  
200 MSPS  
9.6 bits (typ) @Fin=70MHz  
59.9 dBFS (typ) @Fin=70MHz  
59.9 dBFS (typ) @Fin=70MHz  
82 dBFS (typ) @Fin=70MHz  
450mW (typ) @Fs=200MSPS  
280mW (typ) @Fs=170MSPS  
−40°C to +85°C.  
Applications  
Communications  
Medical Imaging  
SFDR  
Portable Instrumentation  
LVDS Power  
CMOS Power  
Operating Temp. Range  
Digital Video  
Block Diagram  
30082002  
© 2009 National Semiconductor Corporation  
300820  
www.national.com  

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