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ADC10D1000CCMLS PDF预览

ADC10D1000CCMLS

更新时间: 2024-11-25 06:36:19
品牌 Logo 应用领域
美国国家半导体 - NSC 转换器模数转换器
页数 文件大小 规格书
64页 2921K
描述
Low Power, 10-Bit, Dual 1.0 GSPS or Single 2.0 GSPS A/DConverter

ADC10D1000CCMLS 技术参数

是否Rohs认证:不符合生命周期:Transferred
包装说明:28.20 X 28.20 MM, 3.10 MM HEIGHT, 1.27 MM PITCH, CERAMIC, CCGA-376Reach Compliance Code:not_compliant
ECCN代码:3A001.A.2.CHTS代码:8542.39.00.01
风险等级:5.41Is Samacsys:N
最大模拟输入电压:2.15 V最小模拟输入电压:
最长转换时间:0.001 µs转换器类型:ADC, PROPRIETARY METHOD
JESD-30 代码:S-CBGA-B376JESD-609代码:e0
长度:27.94 mm最大线性误差 (EL):0.1367%
湿度敏感等级:1模拟输入通道数量:1
位数:10功能数量:1
端子数量:376最高工作温度:125 °C
最低工作温度:-55 °C输出位码:OFFSET BINARY, 2'S COMPLEMENT BINARY
输出格式:PARALLEL, WORD封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:BGA封装等效代码:PGA376(UNSPEC)
封装形状:SQUARE封装形式:GRID ARRAY
峰值回流温度(摄氏度):260电源:1.9 V
认证状态:Not Qualified采样速率:2000 MHz
采样并保持/跟踪并保持:TRACK筛选级别:MIL-STD-883
座面最大高度:3.5 mm子类别:Analog to Digital Converters
标称供电电压:1.9 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子节距:1.27 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:40宽度:27.94 mm
Base Number Matches:1

ADC10D1000CCMLS 数据手册

 浏览型号ADC10D1000CCMLS的Datasheet PDF文件第2页浏览型号ADC10D1000CCMLS的Datasheet PDF文件第3页浏览型号ADC10D1000CCMLS的Datasheet PDF文件第4页浏览型号ADC10D1000CCMLS的Datasheet PDF文件第5页浏览型号ADC10D1000CCMLS的Datasheet PDF文件第6页浏览型号ADC10D1000CCMLS的Datasheet PDF文件第7页 
May 10, 2010  
ADC10D1000QML  
Low Power, 10-Bit, Dual 1.0 GSPS or Single 2.0 GSPS A/D  
Converter  
1.0 General Description  
2.0 Features  
The ADC10D1000 is the latest advance in National's Ultra-  
High-Speed ADC family of products. This low-power, high-  
performance CMOS analog-to-digital converter digitizes sig-  
nals at 10-bit resolution at sampling rates of up to 1.0 GSPS  
in dual channel mode or 2.0 GSPS in single channel mode.  
The ADC10D1000 achieves excellent accuracy and dynamic  
performance while consuming a typical 2.9 Watts of power.  
This space grade, Radiation Tolerant part is rad hard to a  
single event latch up level of greater than 120MeV and a total  
dose (TID) of 100 krad(Si). The product is packaged in a her-  
matic 376 column thermally enhanced CCGA package rated  
over the temperature range of -55°C to +125°C.  
Total Ionizing Dose  
100 krad(Si)  
120 Mev-cm2/mg  
Single Event Latch-up  
Excellent accuracy and dynamic performance  
Low power consumption  
R/W SPI Interface for Extended Control Mode  
Internally terminated, buffered, differential analog inputs  
Ability to interleave the two channels to operate one  
channel at twice the conversion rate  
Test patterns at output for system debug  
Programmable 15-bit gain and 12-bit plus sign offset  
adjustments  
The ADC10D1000 builds upon the features, architecture and  
functionality of the 8-bit GHz family of ADCs. New features  
include an auto-sync feature for multi-chip synchronization,  
independent programmable15-bit gain and 12-bit offset ad-  
justment per channel, LC tank filter on the clock input, and the  
option of two's complement format for the digital output data.  
The unique folding and interpolating architecture, the fully dif-  
ferential comparator design, the innovative design of the in-  
ternal track-and-hold amplifier and the self-calibration  
scheme enable a very flat response of all dynamic parameters  
beyond Nyquist, producing a high 8.9 Effective Number of Bits  
(ENOB) with a 498 MHz input signal and a 1.0 GHz sample  
rate while providing a 10−18 Code Error Rate (C.E.R.) Con-  
suming a typical 2.9 Watts in Non-Demultiplex Mode at 1.0  
GSPS from a single 1.9 Volt supply, this device is guaranteed  
to have no missing codes over the full operating temperature  
range.  
Option of 1:2 demuxed or 1:1 non-demuxed LVDS outputs  
Auto-sync feature for multi-chip systems  
Single 1.9V±0.1V power supply  
376 Ceramic Column Grid Array package (28.2mm x  
28.2mm x 3.1mm with 1.27mm ball-pitch)  
3.0 Key Specifications  
(Non-Demux Non-DES Mode, Fs = 1.0 GSPS, Fin = 248 MHz)  
Resolution  
10 Bits  
Conversion Rate  
Dual channels at 1.0 GSPS (typ)  
Single channel at 2.0 GSPS (typ)  
Code Error Rate  
10 −18 (typ)  
9.0 bits (typ)  
56.1 dBc (typ)  
63 dBc (typ)  
ENOB  
SNR  
SFDR  
Each channel has its own independent DDR Data Clock,  
DCLKI and DCLKQ, which are in phase when both channels  
are powered up, so that only one Data Clock could be used  
to capture all data, which is sent out at the same rate as the  
input sample clock. If the 1:2 Demultiplexed Mode is selected,  
a second 10-bit LVDS bus becomes active for each channel,  
such that the output data rate is sent out two times slower, but  
two times wider to relax data-capture timing margin. The two  
channels (I and Q) can also be interleaved (DES Mode) and  
used as a single 2.0 GSPS ADC to sample on the Q input.  
The output formatting is offset binary or two's complement  
and the Low Voltage Differential Signaling (LVDS) digital out-  
puts are compatible with IEEE 1596.3-1996, with the excep-  
tion of an adjustable common mode voltage between 0.8V  
and 1.2V.  
Full Power Bandwidth  
DNL  
2.8 GHz (typ)  
±0.2 LSB (typ)  
Power Consumption  
Single Channel Enabled  
Dual Channels Enabled  
Power Down Mode  
1.64W (typ)  
2.9W (typ)  
6 mW (typ)  
4.0 Applications  
Data Acquisition Systems  
Wideband Communications  
Direct RF Down Conversion  
© 2010 National Semiconductor Corporation  
300718  
www.national.com  

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