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ADA-4643

更新时间: 2024-11-30 03:17:47
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安捷伦 - AGILENT 放大器
页数 文件大小 规格书
10页 111K
描述
Silicon Bipolar Darlington Amplifier

ADA-4643 数据手册

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Agilent ADA-4643  
Silicon Bipolar Darlington Amplifier  
Data Sheet  
Features  
• Small Signal gain amplifier  
• Operating frequency DC – 2.5 GHz  
• Unconditionally stable  
Surface Mount Package  
Description  
• 50 Ohms input & output  
Agilent Technologies’ ADA-4643  
is an economical, easy-to-use,  
general purpose silicon bipolar  
RFIC gain block amplifiers  
housed in a 4-lead SC-70  
(SOT-343) surface mount plastic  
package which requires only half  
the board space of a SOT-143  
package.  
SOT-343  
• Flat, Broadband Frequency  
Response up to 1 GHz  
• Operating Current: 20 to 60 mA  
• Industry standard SOT-343 package  
• Lead-free option available  
Specifications  
900 MHz, 3.5V, 35 mA (typ.)  
Pin Connections and  
Package Marking  
The Darlington feedback struc-  
ture provides inherent broad  
bandwidth performance, result-  
ing in useful operating frequency  
up to 2.5 GHz. This is an ideal  
device for small-signal gain  
• 17 dB associated gain  
RFout  
& Vd  
• 13.4 dBm P1dB  
GND  
• 28.3 dBm OIP3  
• 4 dB noise figure  
GND  
RFin  
• VSWR < 2.2 throughput operating  
cascades or IF amplification.  
frequency  
Note:  
Top View. Package marking provides orientation  
and identification.  
• Single supply, typical Id = 35 mA  
ADA-4643 is fabricated using  
Agilent’s HP25 silicon bipolar  
process, which employs a double-  
diffused single polysilicon  
“2T” = Device Code  
“x” = Date code character  
identifies month of manufacture.  
Applications  
• Cellular/PCS/WLL base stations  
process with self-aligned  
• Wireless data/WLAN  
• Fiber-optic systems  
• ISM  
submicron emitter geometry. The  
process is capable of simulta-  
neous high fT and high NPN  
breakdown (25 GHz fT at 6V  
BVCEO). The process utilizes  
industry standard device oxide  
isolation technologies and  
submicron aluminum multilayer  
interconnect to achieve superior  
performance, high uniformity,  
and proven reliability.  
Typical Biasing Configuration  
VCC  
bypass  
= 5 V  
V
- V  
d
cc  
I
R
=
c
d
R
C
c
RFC  
Attention:  
C
block  
Observe precautions for  
handling electrostatic  
sensitive devices.  
RF  
input  
2Tx  
RF  
output  
V
= 3.5 V  
d
C
block  
ESD Machine Model (Class A)  
ESD Human Body Model (Class 1B)  
Refer to Agilent Application Note A004R:  
Electrostatic Discharge Damage and Control.  

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