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ADL5355ACPZ-R7

更新时间: 2024-02-14 05:15:47
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页数 文件大小 规格书
24页 593K
描述
1200 MHz to 2500 MHz Balanced Mixer, LO Buffer, IF Amplifier, and RF Balun

ADL5355ACPZ-R7 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:LCC20,.20SQ,25
针数:20Reach Compliance Code:compliant
ECCN代码:5A991.BHTS代码:8542.39.00.01
风险等级:8.42Samacsys Confidence:3
Samacsys Status:Released2D Presentation:https://componentsearchengine.com/2D/0T/579087.4.1.png
Schematic Symbol:https://componentsearchengine.com/symbol.php?partID=579087PCB Footprint:https://componentsearchengine.com/footprint.php?partID=579087
3D View:https://componentsearchengine.com/viewer/3D.php?partID=579087Samacsys PartID:579087
Samacsys Image:https://componentsearchengine.com/Images/9/ADL5355ACPZ-R7.jpgSamacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/4/ADL5355ACPZ-R7.jpg
Samacsys Pin Count:21Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Quad Flat No-LeadSamacsys Footprint Name:CP-20-9 (LFCSP_WQ)
Samacsys Released Date:2017-01-11 11:21:59Is Samacsys:N
其他特性:HIGH ISOLATION特性阻抗:50 Ω
构造:COMPONENT最大输入功率 (CW):20 dBm
JESD-609代码:e3安装特点:SURFACE MOUNT
端子数量:20最大工作频率:2500 MHz
最小工作频率:1200 MHz最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装等效代码:LCC20,.20SQ,25电源:3.3/5 V
射频/微波设备类型:DOUBLE BALANCED子类别:RF/Microwave Mixers
表面贴装:YES技术:BICMOS
端子面层:Matte Tin (Sn)Base Number Matches:1

ADL5355ACPZ-R7 数据手册

 浏览型号ADL5355ACPZ-R7的Datasheet PDF文件第2页浏览型号ADL5355ACPZ-R7的Datasheet PDF文件第3页浏览型号ADL5355ACPZ-R7的Datasheet PDF文件第4页浏览型号ADL5355ACPZ-R7的Datasheet PDF文件第5页浏览型号ADL5355ACPZ-R7的Datasheet PDF文件第6页浏览型号ADL5355ACPZ-R7的Datasheet PDF文件第7页 
1200 MHz to 2500 MHz Balanced Mixer,  
LO Buffer, IF Amplifier, and RF Balun  
ADL5355  
FEATURES  
FUNCTIONAL BLOCK DIAGRAM  
IFGM  
IFOP  
IFON  
PWDN  
LEXT  
RF frequency range of 1200 MHz to 2500 MHz  
IF frequency range of 30 MHz to 450 MHz  
Power conversion gain: 8.4 dB  
20  
19  
18  
17  
16  
ADL5355  
1
2
3
4
5
15  
14  
13  
12  
11  
VPIF  
RFIN  
LOI2  
SSB noise figure of 9.2 dB  
SSB noise figure with 5 dBm blocker of 20 dB  
Input IP3 of 27 dBm  
Input P1dB of 10.4 dBm  
Typical LO drive of 0 dBm  
Single-ended, 50 Ω RF and LO input ports  
High isolation SPDT LO input switch  
Single-supply operation: 3.3 V to 5 V  
Exposed paddle 5 mm × 5 mm, 20-lead LFCSP  
1500 V HBM/500 V FICDM ESD performance  
VPSW  
VGS1  
VGS0  
LOI1  
RFCT  
COMM  
COMM  
BIAS  
GENERATOR  
APPLICATIONS  
Cellular base station receivers  
Transmit observation receivers  
Radio link downconverters  
6
7
LGM3  
8
9
10  
VLO3  
VLO2  
LOSW  
NC  
NC = NO CONNECT  
Figure 1.  
GENERAL DESCRIPTION  
The ADL5355 provides two switched LO paths that can be  
The ADL5355 uses a highly linear, doubly balanced passive  
mixer core along with integrated RF and LO balancing circuitry  
to allow for single-ended operation. The ADL5355 incorporates  
an RF balun, allowing for optimal performance over a 1200 MHz  
to 2500 MHz RF input frequency range using low-side LO  
injection for RF frequencies from 1700 MHz to 2500 MHz and  
high-side LO injection for RF frequencies from 1200 MHz to  
1700 MHz. The balanced passive mixer arrangement provides  
good LO-to-RF leakage, typically better than −39 dBm, and  
excellent intermodulation performance. The balanced mixer  
core also provides extremely high input linearity, allowing the  
device to be used in demanding cellular applications where in-  
band blocking signals may otherwise result in the degradation  
of dynamic performance. A high linearity IF buffer amplifier  
follows the passive mixer core to yield a typical power conversion  
gain of 8.4 dB and can be used with a wide range of output  
impedances.  
used in TDD applications where it is desirable to rapidly switch  
between two local oscillators. LO current can be externally set  
using a resistor to minimize dc current commensurate with the  
desired level of performance. For low voltage applications, the  
ADL5355 is capable of operation at voltages down to 3.3 V with  
substantially reduced current. Under low voltage operation, an  
additional logic pin is provided to power down (<200 μA) the  
circuit when desired.  
The ADL5355 is fabricated using a BiCMOS high performance  
IC process. The device is available in a 5 mm × 5 mm, 20-lead  
LFCSP and operates over a −40°C to +85°C temperature range.  
An evaluation board is also available.  
Rev. 0  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registeredtrademarks arethe property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700  
Fax: 781.461.3113  
www.analog.com  
©2009 Analog Devices, Inc. All rights reserved.  
 

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