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AD647K

更新时间: 2024-01-24 09:17:37
品牌 Logo 应用领域
亚德诺 - ADI 运算放大器
页数 文件大小 规格书
6页 381K
描述
Ultralow Drift, Dual BiFET Op Amp

AD647K 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-99包装说明:, CAN8,.2
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.31.00.01
风险等级:5.64放大器类型:OPERATIONAL AMPLIFIER
架构:VOLTAGE-FEEDBACK最大平均偏置电流 (IIB):0.000035 µA
25C 时的最大偏置电流 (IIB):0.000035 µA最小共模抑制比:80 dB
标称共模抑制比:80 dB频率补偿:YES
最大输入失调电压:1500 µVJESD-30 代码:O-MBCY-W8
JESD-609代码:e0低-偏置:YES
低-失调:NO负供电电压上限:-18 V
标称负供电电压 (Vsup):-15 V功能数量:2
端子数量:8最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:METAL
封装等效代码:CAN8,.2封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:+-15 V认证状态:Not Qualified
最小摆率:2 V/us标称压摆率:3 V/us
子类别:Operational Amplifier最大压摆率:2.8 mA
供电电压上限:18 V标称供电电压 (Vsup):15 V
表面贴装:NO技术:BIPOLAR
温度等级:MILITARY端子面层:Tin/Lead (Sn/Pb)
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED标称均一增益带宽:1000 kHz
最小电压增益:100000

AD647K 数据手册

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Ultralow Drift,  
Dual BiFET Op Amp  
a
AD647  
FEATURES  
Low Offset Voltage Drift  
Matched Offset Voltage  
Matched Offset Voltage Over Temperature  
Matched Bias Currents  
Crosstalk: –124 dB at 1 kHz  
Low Bias Current: 35 pA max Warmed Up  
Low Offset Voltage: 250 V max  
Low Input Voltage Noise: 2 V p-p  
High Open Loop Gain: 108 dB  
Low Quiescent Current: 2.8 mA max  
Low Total Harmonic Distortion  
Standard Dual Amplifier Pinout  
Available in Hermetic Metal Can Package, Hermetic  
Surface Mount (20-Pin LCC) and Chip Form  
MIL-STD-883B Processing Also Available  
Single Version Available: AD547  
PRODUCT DESCRIPTION  
The AD647 is an ultralow drift, dual JFET amplifier that com-  
bines high performance and convenience in a single package.  
The AD647 uses the most advanced ion-implantation and laser  
wafer drift trimming technologies to achieve the highest perfor-  
mance currently available in a dual JFET. Ion-implantation per-  
mits the fabrication of matched JFETs on a monolithic bipolar  
chip. Laser wafer drift trimming trims both the initial offset volt-  
age and its drift with temperature to provide offsets as low as  
100 µV (250 µV max) and drifts of 2.5 µV/°C max.  
PRODUCT HIGHLIGHTS  
1. The AD647 is guaranteed and tested to tight matching speci-  
fications to ensure high performance and to eliminate the se-  
lection and matching of single devices.  
2. Laser wafer drift trimming reduces offset voltage and offset  
In addition to outstanding individual amplifier performance, the  
AD647 offers guaranteed and tested matching performance on  
critical parameters such as offset voltage, offset voltage drift and  
bias currents.  
voltage drifts to 250 µV and 2.5 µV/°C max.  
3. Voltage noise is guaranteed at 4 µV p-p max (0.1 Hz to  
10 Hz) on K, L and S grades.  
4. Bias current (35 pA K, L, S; 75 pA J) is specified after five  
minutes of operation.  
The high level of performance makes the AD647 especially well  
suited for high precision instrumentation amplifier applications  
that previously would have required the costly selection and  
matching of space wasting single amplifiers.  
5. Total supply current is a low 2.8 mA max.  
6. High open loop gain ensures high linearity in precision instru-  
mentation amplifier applications.  
The AD647 is offered in four performance grades, three com-  
mercial (the J, K and L) and one extended (the S). All are sup-  
plied in hermetically sealed 8-pin TO-99 packages and are  
available processed to MIL-STD-883B. The LCC version is  
also available processed to MIL-STD-883B.  
7. The standard dual amplifier pinout permits the direct substi-  
tution of the AD647 for lower performance devices.  
8. The AD647 is available in chip form.  
REV. A  
Information furnished by Analog Devices is believed to be accurate and  
reliable. However, no responsibility is assumed by Analog Devices for its  
use, nor for any infringements of patents or other rights of third parties  
which may result from its use. No license is granted by implication or  
otherwise under any patent or patent rights of Analog Devices.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 617/329-4700  
Fax: 617/326-8703  

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