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ACT108W-600D PDF预览

ACT108W-600D

更新时间: 2024-01-07 22:12:51
品牌 Logo 应用领域
恩智浦 - NXP 三端双向交流开关光电二极管
页数 文件大小 规格书
15页 155K
描述
600V, 0.8A, TRIAC, PLASTIC, SC-73, 4 PIN

ACT108W-600D 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G4Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.28
其他特性:SENSITIVE GATE配置:SINGLE
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大均方根通态电流:0.8 A断态重复峰值电压:600 V
表面贴装:YES端子面层:TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30触发设备类型:TRIAC
Base Number Matches:1

ACT108W-600D 数据手册

 浏览型号ACT108W-600D的Datasheet PDF文件第2页浏览型号ACT108W-600D的Datasheet PDF文件第3页浏览型号ACT108W-600D的Datasheet PDF文件第4页浏览型号ACT108W-600D的Datasheet PDF文件第5页浏览型号ACT108W-600D的Datasheet PDF文件第6页浏览型号ACT108W-600D的Datasheet PDF文件第7页 
ACT108W-600D  
T223  
SO  
AC Thyristor power switch  
Rev. 02 — 27 December 2010  
Product data sheet  
1. Product profile  
1.1 General description  
AC Thyristor power switch in a SOT223 surface-mountable plastic package with  
self-protective capabilities against low and high energy transients  
1.2 Features and benefits  
Common terminal on mounting base  
allows multiple ACTs on shared  
cooling pad  
Safe clamping of low energy  
over-voltage transients  
Self-protective turn-on during high  
Exclusive negative gate triggering  
Full cycle AC conduction  
High noise immunity  
energy voltage transients  
Surface-mountable package  
Very sensitive gate for lowest gate  
trigger current  
Remote gate separates the gate driver  
from the effects of the load current  
1.3 Applications  
Fan motor circuits  
Pump motor circuits  
Lower-power highly inductive, resistive  
and safety loads  
1.4 Quick reference data  
Table 1.  
Symbol  
VDRM  
Quick reference data  
Parameter  
Conditions  
Min Typ Max Unit  
repetitive peak  
off-state voltage  
-
-
-
-
-
600  
V
IGT  
gate trigger  
current  
VD = 12 V; IT = 100 mA; LD-  
G-; Tj = 25 °C  
0.5  
0.5  
-
5
mA  
mA  
A
VD = 12 V; IT = 100 mA; LD+  
G-; Tj = 25 °C; see Figure 10  
5
IT(RMS)  
RMS on-state  
current  
full sine wave; Tsp 112 °C;  
see Figure 4; see Figure 1;  
see Figure 2  
0.8  
dVD/dt  
rate of rise of  
off-state voltage  
VDM = 402 V; Tj = 125 °C; gate  
open circuit; exponential  
waveform; see Figure 14  
300  
-
-
V/µs  
 
 
 
 
 

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