Datasheet > ACT-S512K32V-045P7T

ACT-S512K32V-045P7T

更新时间： 2024-02-13 17:46:07

品牌	Logo	应用领域
艾法斯 - AEROFLEX		静态存储器
页数	文件大小	规格书
8页	172K
描述
ACT-S512K32V High Speed 3.3Volt 16 Megabit SRAM Multichip Module

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中文翻译

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数据手册

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ACT-S512K32V High Speed 3.3Volt

16 Megabit SRAM Multichip Module

Features

■ 4 Low Power CMOS 512K x 8 SRAMs in one MCM

■ Overall configuration as 512K x 32

■ Input and Output TTL Compatible

■ 17, 20, 25, 35 & 45ns Access Times, 15ns Available by

CIRCUIT TECHNOLOGY

www.aeroflex.com/act1.htm

Special Order

■ Full Military (-55°C to +125°C) Temperature Range

■ +3.3V Power Supply

■ Choice of Surface Mount or PGA Type Co-fired Packages:

● 68–Lead, Dual-Cavity CQFP (F2), .88"SQ x .20"max (.18"max

thickness available, contact factory for details) (Drops into the

68 Lead JEDEC .99"SQ CQFJ footprint)

General Description

The ACT–S512K32V is a High

Speed 4 megabit CMOS SRAM

● 66–Pin, PGA-Type (P1), 1.38"SQ x .245"max

● 66–Pin, PGA-Type (P7), 1.08"SQ x .185"max

Multichip

Module

(MCM)

designed for full temperature

range, 3.3V Power Supply,

military, space, or high reliability

mass memory and fast cache

applications.

■ Internal Decoupling Capacitors

■ DESC SMD# Pending

The MCM can be organized

as a 512K x 32 bits, 1M x 16

bits or 2M x 8 bits device and is

Block Diagram – PGA Type Package(P1,P7) & CQFP(F2)

WE1 CE1 WE2 CE2 WE3 CE3 WE4 CE4

input

and

output

TTL

compatible. Writing is executed

when the write enable (WE)

and chip enable (CE) inputs are

low. Reading is accomplished

when WE is high and CE and

output enable (OE) are both

low. Access time grades of

17ns, 20ns, 25ns, 35ns and

45ns maximum are standard.

A0 – A18

512Kx8

I/O0-7

I/O8-15

I/O16-23

I/O24-31

The products are designed for

operation over the temperature

range of -55°C to +125°C and

screened under the full military

environment. DESC Standard

Military Drawing (SMD) part

numbers are pending.

Pin Description

I/O0-31 Data I/O

A0–18 Address Inputs

WE1–4 Write Enables

CE1–4 Chip Enables

The

ACT-S512K32V

Vcc

GND

Output Enable

Power Supply

Ground

manufactured in Aeroflex’s

80,000ft

certified facility in Plainview,

N.Y.

MIL-PRF-38534

Not Connected

12 3 4 5 6 7 8

中文翻译

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与ACT-S512K32V-045P7T相关器件

型号	品牌	获取价格	描述	数据表
ACTS512K8	AEROFLEX	获取价格	ACT-S512K8 High Speed 4 Megabit Monolithic SRAM
ACT-S512K8N-017F16Q	ETC	获取价格	x8 SRAM
ACT-S512K8N-017F3C	AEROFLEX	获取价格	ACT-S512K8 High Speed 4 Megabit Monolithic SRAM
ACT-S512K8N-017F3I	AEROFLEX	获取价格	ACT-S512K8 High Speed 4 Megabit Monolithic SRAM
ACT-S512K8N-017F3M	AEROFLEX	获取价格	ACT-S512K8 High Speed 4 Megabit Monolithic SRAM
ACT-S512K8N-017F3Q	AEROFLEX	获取价格	ACT-S512K8 High Speed 4 Megabit Monolithic SRAM
ACT-S512K8N-017F3T	AEROFLEX	获取价格	ACT-S512K8 High Speed 4 Megabit Monolithic SRAM
ACT-S512K8N-017F4C	AEROFLEX	获取价格	ACT-S512K8 High Speed 4 Megabit Monolithic SRAM
ACT-S512K8N-017F4I	AEROFLEX	获取价格	ACT-S512K8 High Speed 4 Megabit Monolithic SRAM
ACT-S512K8N-017F4M	AEROFLEX	获取价格	ACT-S512K8 High Speed 4 Megabit Monolithic SRAM

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