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ACT-S2M32A-090F18Q PDF预览

ACT-S2M32A-090F18Q

更新时间: 2024-11-10 22:13:19
品牌 Logo 应用领域
艾法斯 - AEROFLEX 闪存
页数 文件大小 规格书
9页 95K
描述
ACT-F2M32A High Speed 64 Megabit Sector Erase FLASH Multichip Module

ACT-S2M32A-090F18Q 数据手册

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ACT–F2M32A High Speed 64 Megabit  
Sector Erase  
FLASH Multichip Module  
CIRCUIT TECHNOLOGY  
www.aeroflex.com/act1.htm  
Features  
4 Low Voltage/Power AMD 2M x 8 FLASH Die in One  
Ready/Busy output (RY/BY) – Hardware method for  
MCM Package  
detection of program or erase cycle completion  
Overall Configuration is 2M x 32  
+5V Power Supply / +5V Programing Operation  
Access Times of 90, 120 and 150 ns  
Erase/Program Cycles – 100,000 Minimum  
Sector erase architecture (Each Die)  
Hardware RESET pin – Resets internal state machine  
to the read mode  
Erase Suspend/Resume – Supports reading or  
programming data to a sector not being erased  
Packaging – Hermetic Ceramic  
68 Lead, .94" x .94" x .140" Single-Cavity Small  
Outline Gull Wing, Aeroflex code# "F18" (Drops into  
the 68 Lead JEDEC .99"SQ CQFJ footprint)  
32 uniform sectors of 64 Kbytes each  
Any combination of sectors can be erased. Also  
supports full chip erase  
Internal Decoupling Capacitors for Low Noise  
Operation  
Sector group protection is user definable  
Embedded Erase Algorithims – Automatically  
Commercial, Industrial and Military Temperature  
pre-programs and erases the die or any sector  
Ranges  
Embedded Program Algorithims – Automatically  
MIL-PRF-38534 Compliant MCMs Available  
programs and verifies data at specified address  
Pin Description  
I/O0-31 Data I/O  
CE4  
A0–20 Address Inputs  
Block Diagram – CQFP(F18)  
General Description  
Utilizing AMD’s Sector Erase  
Standard Configuration  
CE1  
CE2  
CE3  
Flash  
Memory  
Die,  
the  
RESET  
WE  
OE  
A0 A20  
RY/BY  
WE  
CE1-4  
OE  
Write Enables  
Chip Enables  
Output Enable  
Ready/Busy  
Reset  
ACT-F2M32A is a high speed,  
64  
multichip  
megabit  
CMOS  
flash  
(MCM)  
module  
designed for full temperature  
range, military, space, or high  
reliability applications.  
RY/BY  
RESET  
VCC  
2Mx8  
2Mx8  
2Mx8  
2Mx8  
Power Supply  
Ground  
The ACT-F2M32A consists of  
four high-performance AMD  
Am29F016 16Mbit (16,777,216  
bit) memory die. Each die  
contains 8 separately write or  
GND  
NC  
8
8
8
8
Not Connected  
I/O0-7  
I/O8-15  
I/O16-23  
I/O24-31  
Block Diagram – CQFP(F18)  
erase  
sector  
groups  
of  
Pin Description  
Optional Configuration  
256Kbytes (A sector group  
consists of 4 adjacent sectors of  
64Kbytes each).  
I/O0-31  
Data I/O  
WE1 CE1 WE2 CE2 WE3 CE3 WE4 CE4  
A0–20 Address Inputs  
RESET  
OE  
A0 A20  
WE1-4  
CE1-4  
OE  
Write Enable  
Chip Enables  
Output Enable  
Reset  
The command register is  
written by bringing WE to a logic  
low level (VIL), while CE is low  
and OE is high (VIH). Reading is  
accomplished by chip Enable  
(CE) and Output Enable (OE)  
being logically active. Access  
time grades of 90ns, 120ns and  
150ns maximum are standard.  
2Mx8  
2Mx8  
2Mx8  
2Mx8  
RESET  
VCC  
Power Supply  
Ground  
8
8
8
8
GND  
NC  
Not Connected  
I/O0-7  
I/O8-15  
I/O16-23  
I/O24-31  
eroflex Circuit Technology - Advanced Multichip Modules © SCD1666A REV A 9/12/97  

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