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ACT-RS128K32N-045P1Q

更新时间： 2024-11-24 22:27:35
品牌 Logo 应用领域
艾法斯 - AEROFLEX 静态存储器
页数 文件大小 规格书
8页 140K
描述
RAD Tolerant ACT-RS128K32 High Speed 4 Megabit SRAM Multichip Module

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中文翻译

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RAD Tolerant  
ACT–RS128K32 High Speed  
4 Megabit SRAM Multichip Module  
Preliminary  
Features  
■ 4 Low Power CMOS 128K x 8 SRAMs in one MCM  
■ Overall configuration as 128K x 32  
■ Tolerant to 30KRad (Si)  
CIRCUIT TECHNOLOGY  
2
www.aeroflex.com/act1.htm  
■ Latch-up Immunity to 112MeV/(mg/cm )  
■ Input and Output TTL Compatible  
■ 35 & 45ns Access Times  
■ Full Military (-55°C to +125°C) Temperature Range  
■ For Class K devices per MIL-PRF-38534 - Consult Factory  
■ +5V Power Supply  
General Description  
■ Choice of 4 Hermetically sealed Co-fired Packages:  
● 68–Lead, Low Profile CQFP (F1), 1.56"SQ x .140"max  
● 68–Lead, Dual-Cavity CQFP (F2), .88"SQ x .20"max (.18"max thickness  
available, contact factory for details) (Drops into the 68 Lead JEDEC .99"SQ  
CQFJ footprint)  
The ACT–RS128K32 is a High  
Speed 4 megabit CMOS SRAM  
Multichip  
Module  
(MCM)  
designed for full temperature  
range, military, space, or high  
reliability mass memory and  
fast cache applications.  
● 66–Lead, PGA-Type (P1), 1.385"SQ x .245"max  
■ Internal Decoupling Capacitors  
The MCM can be organized  
as a 128K x 32 bits, 256K x 16  
bits or 512k x 8 bits device and  
is input and output TTL  
compatible. Writing is executed  
when the write enable (WE)  
and chip enable (CE) inputs are  
low. Reading is accomplished  
when WE is high and CE and  
output enable (OE) are both  
low. Access time grades of  
35ns and 45ns maximum are  
standard.  
Block Diagram – PGA Type Package(P1) & CQFP(F2)  
Pin Description  
WE1 CE1 WE2 CE2 WE3 CE3 WE4 CE4  
I/O0-31  
Data I/O  
A0–16 Address Inputs  
WE1–4 Write Enables  
CE1–4 Chip Enables  
A0 – A16  
OE  
128Kx8  
128Kx8  
128Kx8  
128Kx8  
OE  
Vcc  
GND  
NC  
Output Enable  
Power Supply  
Ground  
8
8
8
8
Not Connected  
The +5 Volt power supply  
version is standard.  
I/O0-7  
I/O8-15  
I/O16-23  
I/O24-31  
Block Diagram – CQFP(F1)  
The products are designed for  
operation over the temperature  
range of -55°C to +125°C and  
screened under the full military  
environment. DESC Standard  
Military Drawing (SMD) part  
numbers are pending.  
Pin Description  
I/O0-31  
Data I/O  
CE1  
CE2  
CE3  
CE4  
WE  
OE  
A0 – A16  
A0–16 Address Inputs  
WE  
Write Enable  
CE1–4 Chip Enables  
128Kx8  
128Kx8  
128Kx8  
128Kx8  
The  
ACT-RS128K32  
is  
OE  
Vcc  
GND  
NC  
Output Enable  
Power Supply  
Ground  
manufactured in Aeroflex’s  
2
80,000ft  
certified facility in Plainview,  
N.Y.  
MIL-PRF-38534  
8
8
8
8
Not Connected  
I/O0-7  
I/O8-15  
I/O16-23  
I/O24-31  
eroflex Circuit Technology - Advanced Multichip Modules © SCD3659 REV 3 12/17/98  
12345678

中文翻译

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ACT-RS128K32N-045P1T AEROFLEX

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ACTS00D INTERSIL

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 		Radiation Hardened Quad 2-Input NAND Gate
ACTS00D/SAMPLE RENESAS

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ACTS00DMSR INTERSIL

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 		Radiation Hardened Quad 2-Input NAND Gate
ACTS00DMSR-02 RENESAS

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 		NAND Gate, ACT Series, 4-Func, 2-Input, CMOS, CDIP14
ACTS00HMSR INTERSIL

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 		Radiation Hardened Quad 2-Input NAND Gate
ACTS00HMSR-02 RENESAS

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 		ACT SERIES, QUAD 2-INPUT NAND GATE, UUC16
ACTS00K INTERSIL

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 		Radiation Hardened Quad 2-Input NAND Gate
ACTS00K/SAMPLE RENESAS

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 		ACT SERIES, QUAD 2-INPUT NAND GATE, CDFP14

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