Datasheet > ACT-RS128K32N-045F2M

ACT-RS128K32N-045F2M

更新时间： 2024-11-24 22:34:03

品牌	Logo	应用领域
艾法斯 - AEROFLEX		静态存储器
页数	文件大小	规格书
8页	140K
描述
RAD Tolerant ACT-RS128K32 High Speed 4 Megabit SRAM Multichip Module

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RAD Tolerant

ACT–RS128K32 High Speed

4 Megabit SRAM Multichip Module

Preliminary

Features

■ 4 Low Power CMOS 128K x 8 SRAMs in one MCM

■ Overall configuration as 128K x 32

■ Tolerant to 30KRad (Si)

CIRCUIT TECHNOLOGY

www.aeroflex.com/act1.htm

■ Latch-up Immunity to 112MeV/(mg/cm )

■ Input and Output TTL Compatible

■ 35 & 45ns Access Times

■ Full Military (-55°C to +125°C) Temperature Range

■ For Class K devices per MIL-PRF-38534 - Consult Factory

■ +5V Power Supply

General Description

■ Choice of 4 Hermetically sealed Co-fired Packages:

● 68–Lead, Low Profile CQFP (F1), 1.56"SQ x .140"max

● 68–Lead, Dual-Cavity CQFP (F2), .88"SQ x .20"max (.18"max thickness

available, contact factory for details) (Drops into the 68 Lead JEDEC .99"SQ

CQFJ footprint)

The ACT–RS128K32 is a High

Speed 4 megabit CMOS SRAM

Multichip

Module

(MCM)

designed for full temperature

range, military, space, or high

reliability mass memory and

fast cache applications.

● 66–Lead, PGA-Type (P1), 1.385"SQ x .245"max

■ Internal Decoupling Capacitors

The MCM can be organized

as a 128K x 32 bits, 256K x 16

bits or 512k x 8 bits device and

is input and output TTL

compatible. Writing is executed

when the write enable (WE)

and chip enable (CE) inputs are

low. Reading is accomplished

when WE is high and CE and

output enable (OE) are both

low. Access time grades of

35ns and 45ns maximum are

standard.

Block Diagram – PGA Type Package(P1) & CQFP(F2)

Pin Description

WE1 CE1 WE2 CE2 WE3 CE3 WE4 CE4

I/O0-31

Data I/O

A0–16 Address Inputs

WE1–4 Write Enables

CE1–4 Chip Enables

A0 – A16

128Kx8

Vcc

GND

Output Enable

Power Supply

Ground

Not Connected

The +5 Volt power supply

version is standard.

I/O0-7

I/O8-15

I/O16-23

I/O24-31

Block Diagram – CQFP(F1)

The products are designed for

operation over the temperature

range of -55°C to +125°C and

screened under the full military

environment. DESC Standard

Military Drawing (SMD) part

numbers are pending.

Pin Description

I/O0-31

Data I/O

CE1

CE2

CE3

CE4

A0 – A16

A0–16 Address Inputs

Write Enable

CE1–4 Chip Enables

128Kx8

The

ACT-RS128K32

Vcc

GND

Output Enable

Power Supply

Ground

manufactured in Aeroflex’s

80,000ft

certified facility in Plainview,

N.Y.

MIL-PRF-38534

Not Connected

I/O0-7

I/O8-15

I/O16-23

I/O24-31

12 3 4 5 6 7 8

中文翻译

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与ACT-RS128K32N-045F2M相关器件

型号	品牌	获取价格	描述	数据表
ACT-RS128K32N-045F2Q	AEROFLEX	获取价格	RAD Tolerant ACT-RS128K32 High Speed 4 Megabit SRAM Multichip Module
ACT-RS128K32N-045F2T	AEROFLEX	获取价格	RAD Tolerant ACT-RS128K32 High Speed 4 Megabit SRAM Multichip Module
ACT-RS128K32N-045P1C	AEROFLEX	获取价格	RAD Tolerant ACT-RS128K32 High Speed 4 Megabit SRAM Multichip Module
ACT-RS128K32N-045P1I	AEROFLEX	获取价格	RAD Tolerant ACT-RS128K32 High Speed 4 Megabit SRAM Multichip Module
ACT-RS128K32N-045P1M	AEROFLEX	获取价格	RAD Tolerant ACT-RS128K32 High Speed 4 Megabit SRAM Multichip Module
ACT-RS128K32N-045P1Q	AEROFLEX	获取价格	RAD Tolerant ACT-RS128K32 High Speed 4 Megabit SRAM Multichip Module
ACT-RS128K32N-045P1T	AEROFLEX	获取价格	RAD Tolerant ACT-RS128K32 High Speed 4 Megabit SRAM Multichip Module
ACTS00D	INTERSIL	获取价格	Radiation Hardened Quad 2-Input NAND Gate
ACTS00D/SAMPLE	RENESAS	获取价格	ACT SERIES, QUAD 2-INPUT NAND GATE, CDIP14, SIDE BRAZED, CERAMIC, DIP-14
ACTS00D/SAMPLE-02	RENESAS	获取价格	ACT SERIES, QUAD 2-INPUT NAND GATE, CDIP14, METAL SEALED, SIDE BRAZED, CERAMIC, DIP-14

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