Datasheet > ACT-F512K8N-070F7T

ACT-F512K8N-070F7T

更新时间： 2024-11-04 22:07:23

品牌	Logo	应用领域
艾法斯 - AEROFLEX		闪存内存集成电路
页数	文件大小	规格书
21页	151K
描述
ACT-F512K8 High Speed 4 Megabit Monolithic FLASH

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

ACT-F512K8N-070F7T 数据手册

浏览型号ACT-F512K8N-070F7T的Datasheet PDF文件第2页

浏览型号ACT-F512K8N-070F7T的Datasheet PDF文件第3页

浏览型号ACT-F512K8N-070F7T的Datasheet PDF文件第4页

浏览型号ACT-F512K8N-070F7T的Datasheet PDF文件第5页

浏览型号ACT-F512K8N-070F7T的Datasheet PDF文件第6页

浏览型号ACT-F512K8N-070F7T的Datasheet PDF文件第7页

ACT–F512K8 High Speed

4 Megabit Monolithic FLASH

CIRCUIT TECHNOLOGY

www.aeroflex.com

Features

■ Low Power Monolithic 512K x 8 FLASH

■ Industry Standard Pinouts

■ TTL Compatible Inputs and CMOS Outputs ■ Packaging – Hermetic Ceramic

● 32 Lead, 1.6" x .6" x .20" Dual-in-line Package (DIP),

■ Access Times of 60, 70, 90, 120 and 150ns

■ +5V Programing, 5V ±10% Supply

■ 100,000 Erase / Program Cycles

■ Low Standby Current

Aeroflex code# "P4"

● 32 Lead, .82" x .41" x .11" Ceramic Flat Package

(FP), Aeroflex code# "F6"

● 32 Lead, .82" x .41" x .132" Ceramic Flat Package

(FP Lead Formed), Aeroflex code# "F7"

■ Sector Architecture

■ Page Program Operation and Internal

● 8 Equal size sectors of 64K bytes each

● Any Combination of Sectors ccan be erased with one

command sequence.

Program Control Time

■ Supports Full Chip Erase

■ Commercial, Industrial and Military

■ Embedded Erase and Program Algorithms

■ Supports Full Chip Erase

Temperature Ranges

■ DESC SMD Pending

■ MIL-PRF-38534 Compliant Circuits Available

5962-96692 (P4,F6,F7)

Block Diagram – DIP (P4) & Flat Packages (F6,F7)

General Description

The ACT–F512K8 is a high

A0 – A18

speed,

monolithic

megabit CMOS

Flash module

designed for full temperature

range military, space, or high

reliability applications.

Vss

512Kx8

Vcc

This device is input TTL and

output CMOS compatible. The

command register is written by

bringing WE to a logic low level

(V^IL), while CE is low and OE is

at logic high level (V^IH). Reading

is accomplished by chip Enable

(CE) and Output Enable (OE)

being logically active, see

Figure 9. Access time grades of

60ns, 70ns, 90ns, 120ns and

150ns maximum are standard.

I/O0-7

Pin Description

I/O0-7

Data I/O

A0–18 Address Inputs

Write Enable

Chip Enable

Output Enable

Power Supply

Ground

VCC

VSS

The

ACT–F512K8

available

in a choice of

NC Not Connected

12 3 4 5 6 7...21

中文翻译

下载PDF

与ACT-F512K8N-070F7T相关器件

型号	品牌	获取价格	描述	数据表
ACT-F512K8N-070P4C	AEROFLEX	获取价格	ACT-F512K8 High Speed 4 Megabit Monolithic FLASH
ACT-F512K8N-070P4I	AEROFLEX	获取价格	ACT-F512K8 High Speed 4 Megabit Monolithic FLASH
ACT-F512K8N-070P4M	AEROFLEX	获取价格	ACT-F512K8 High Speed 4 Megabit Monolithic FLASH
ACT-F512K8N-070P4Q	AEROFLEX	获取价格	ACT-F512K8 High Speed 4 Megabit Monolithic FLASH
ACT-F512K8N-070P4T	AEROFLEX	获取价格	ACT-F512K8 High Speed 4 Megabit Monolithic FLASH
ACT-F512K8N-090F6C	AEROFLEX	获取价格	ACT-F512K8 High Speed 4 Megabit Monolithic FLASH
ACT-F512K8N-090F6I	AEROFLEX	获取价格	ACT-F512K8 High Speed 4 Megabit Monolithic FLASH
ACT-F512K8N-090F6M	AEROFLEX	获取价格	ACT-F512K8 High Speed 4 Megabit Monolithic FLASH
ACT-F512K8N-090F6Q	AEROFLEX	获取价格	ACT-F512K8 High Speed 4 Megabit Monolithic FLASH
ACT-F512K8N-090F6T	AEROFLEX	获取价格	ACT-F512K8 High Speed 4 Megabit Monolithic FLASH

与ACT-F512K8N-070F7T相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

ACT-F512K8N-070F7T

ACT-F512K8N-070F7T 数据手册

与ACT-F512K8N-070F7T相关器件

与ACT-F512K8N-070F7T相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

ACT-F512K8N-070F7T

ACT-F512K8N-070F7T 数据手册

与ACT-F512K8N-070F7T相关器件

与ACT-F512K8N-070F7T相关文章

您还可以找

您在本页遇到什么问题？