Datasheet > ACE9435B

ACE9435B

更新时间： 2024-09-23 12:23:07

品牌	Logo	应用领域
ACE		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	521K
描述
P-Channel Enhancement Mode Field Effect Transistor

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ACE9435B 数据手册

ACE9435B

P-Channel Enhancement Mode Field Effect Transistor

Description

This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench

technology, which is especially used to minimize on-state resistance. This device is particularly suited for

low voltage application such as portable equipment, power management and other battery powered

circuits, and low in-line power loss are needed in a very small outline surface mount package.

Features

 VDS(V)=-320V, I_D=-5.24.1A

 RDS(ON)=51mΩ @ V_GS=-10V

 RDS(ON)=68mΩ @ V_GS=-4.5V

 High density cell design for low R_DS(ON)

Absolute Maximum Ratings

Parameter

Symbol

V_DSS

Max

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GSS

±20

-5.2

-50

Continuous T_A=25^OC

Pulsed ^{(Note 2)}

Total Power Dissipation ^{(Note 1)}

Drain Current ^{(Note 1)}

I_D

P_D

1.5

Operating and Storage Temperature Range

T_J,T_STG-55 to 150 C

Packaging Type

SOP-8

VER 1.2

12 3 4 5

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