Datasheet > ACE1500B

ACE1500B

更新时间： 2022-05-26 09:28:12

品牌	Logo	应用领域
ACE		晶体晶体管场效应晶体管
页数	文件大小	规格书
6页	758K
描述
P-Channel Enhancement Mode Field Effect Transistor

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ACE1500B 数据手册

ACE1500B

P-Channel Enhancement Mode Field Effect Transistor

Description

The ACE1500B is P-Channel enhancement mode power MOSFET which is produced with high cell

density and DMOS trench technology .This device particularly suits low voltage applications, especially

for battery powered circuits, the tiny and thin outline saves PCB consumption.

Features

 V_DS(V)=-20V

 I_D=-1.6A (V_GS=-4.5V)

 R_DS(ON)＜155mΩ (V_GS=-4.5V)

 R_DS(ON)＜168mΩ (V_GS=-2.5V)

 R_DS(ON)＜220mΩ (V_GS=-1.8V)

Absolute Maximum Ratings

Parameter

Symbol

V_DSS

V_GSS

I_D

Max

-20

±12

-1.6

-5

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current (Continuous) T_A=25^OC

Drain Current (Pulse)

I_DM

Power Dissipation T_A=25^OC

P_D

350

Operating and Storage Temperature Range T_J,T_STG-55 to 150 C

Packaging Type

SOT-323

VER 1.2

12 3 4 5 6

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