Datasheet > ABS201

ABS201

更新时间： 2024-02-21 22:36:58

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描述
Bridge Rectifier

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技术参数
数据手册

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ABS201 技术参数

Package：	ABS	Maximum recurrent peak reverse voltage：	100
Maximum average forward rectified current：	2	Peak forward surge current：	50
Maximum instantaneous forward voltage：	1.1	Maximum reverse current：	10
TJ(℃）：	-55～+150

ABS201 数据手册

SEMICONDUCTOR

ABS202 ~ ABS210

TECHNICAL DATA

Bridge Rectifier

■Features

Outline Dimensions and Mark

■

●

I_o

ABS

.010(0.25)

.006(0.15)

●

V_RRM

200V~1000V

.031(0.8)

.012(0.3)

Mounting Pad Layout

Glass passivated chip

.006(0.15)

.001(0.02)

High surge forward current capability

177(4.5).252(6.4)

169(4.3).236(6.0)

0.225(5.72)

.161(4.1)

.154(3.9)

■ Applications

.20(5.1)

.193(4.9)

●

General purpose 1 phase Bridge

rectifier applications

.057(1.45)

.049(1.25)

0.157(4.00)

0.035(0.90)

.059(1.50)MAX

.028(0.7)

.024(0.6)

Dimensions in inches and (millimeters)

■Limiting Values (Absolute Maximum Rating）

ABS2

Item

Symbol Unit

Conditions

Repetitive Peak Reverse

Voltage

V_RRM

200

400

600

800

1000

60Hz sine wave,

R-load,Tc=115℃

Average Rectified Output

Current

On alumina substrate

I_O

2.0

Surge(Non-

repetitive)Forward Current

I_FSM

60H_Zsine wave, 1 cycle, T_j=25℃

Storage Temperature

Junction Temperature

T_stg

T_j

-55 ~+150

℃

Electrical Characteristics （Ta=25℃ Unless otherwise specified）

■

Item

Symbol Unit

Test Condition

Max

V_FM

1.0

Peak Forward Voltage

Peak Reverse Current

I_FM=1.0A, Pulse measurement, Rating of per diode

V_RM=V_RRM, Pulse measurement, Rating of per diode

I_RRM

Ta=25℃

500

Ta=125℃

Between junction and ambient, On alumina substrate

θJ-A

热阻

℃/W

Thermal Resistance

Between junction and lead

θJ-L

2017 01 14

Revision No : 0

1/2

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