Datasheet > ABS2-ABS10

ABS2-ABS10

更新时间： 2025-07-22 18:51:59

品牌	Logo	应用领域
南晶电子 - DGNJDZ		/
页数	文件大小	规格书
4页	2232K
描述
PIV (V) : 200-1000; IO (A) : 1.0; VFM (V) : 0.98; IR (uA) : 5; Package Outline : ABS;

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中文翻译

获取价格

数据手册

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ABS2-ABS10 数据手册

DONGGUAN NANJING ELECTRONICS LTD.,

ABS Plastic-Encapsulate Bridge Rectifier

ABS2 THRU ABS10

General Purpose Bridge Rectifier

Features

ABS

●I_F(AV)

●VRRM

50V-1000V

●High surge current capability

●

Glass passivated chip

Applications

●

General purpose 1 phase Bridge

rectifier applications

Marking

●

ABSX

X From 02 To 10

ABS

Item

Symbol Unit

Conditions

Repetitive Peak Reverse

Voltage

V_RRM

200

400

600

800

1000

Maximum RMS Voltage

140

280

420

560

700

RMS

Average Rectified Output

Current

60Hz sine wave,

On alumina substrate

R-load,Ta=50℃

I_O

1.0

sine wave, 1 cycle, T_j=25℃

8.3ms

1.0ms

Surge(Non-

repetitive)Forward Current

I_FSM

A²S

I²t

1ms≤t<8.3ms Tj=25℃，Rating of per diode

Current Squared Time

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55 ~+150

℃

Electrical Characteristics (T=25℃ Unless otherwise specified）

Max

Symbol Unit

Test Condition

Item

V_FM

0.98

Peak Forward Voltage

Peak Reverse Current

I_FM=1.0A, Pulse measurement, Rating of per diode

I_RRM

_RM=V_RRM, Pulse measurement, Rating of per diode

Between junction and ambient, On alumina substrate

Between junction and lead

62.5

μA

θJ-A

θJ-L

Thermal Resistance

℃/W

R_θ

Between junction and case

J-C

Dongguan Nanjing Electronics Ltd.

1/4

www.dgnjdz.com

12 3 4

中文翻译

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