ABAS21-A-C-S
GOOD-ARK Electronics
SOT
-
23 Plastic-Encapsulate Switching Diode
Features
Pb
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●
●
50nS; Fast Switching Device (TRR <50 nS)
225mW ; Power Dissipation of 225mW
High Stability and High Reliability
Low reverse leakage
RoHS
COMPLIAN
●
SOT-23
●
AEC-Q101 Qualified
ABAS21
Marking
ABAS21A
Marking
ABAS21C
Marking
ABAS21S
Mechanical Data
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●
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SOT-23 Small Outline Plastic Package
Epoxy UL: 94V-0
Mounting Position: Any
Marking
Maximum Ratings & Thermal Characteristics (@ TA = 25C unless otherwise specified)
Para meters
Reverse Voltage
Peak Repetitive Reverse Voltage
Power Dissipation
Symbol
VR
VRRM
Pd
V alue
250
250
225
400
625
2.5
Unit
V
V
mW
mA
mA
A
IFM
Forward continuous Current
peak forward surge current
Repetitive
IFRM
IFSM
Non-Repetitive Peak Forward Surge
Current @t=8.3ms; TA=25℃
Operating junction temperature
TJ
Ts
150
-55-+150
555
℃
℃
Storage temperature range
Thermal Resistance from Junction to Ambient
RθJA
℃/W
Valid provided that electrodes are kept at ambient temperature.
(@ T = 25C unless otherwise specified)
Electr ical Characteristics
A
Limits
Max
Parameter
Test Condition
Unit
Symbol
Min
250
Reverse Voltage
IR=100uA
VR=200V
IF=100mA
V
uA
VBR
IR
0.1
Reverse Leakage Current
1.00
1.25
Forward Voltage
V
VF
IF=200mA
IF= IR=30mA
RL=100Ω
Reverse Recovery Time
50
5
nS
pF
TRR
CT
IRR=0.1 X IR
VR=0V, f=1MHZ
Capaci tance
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Doc.No.643617