5秒后页面跳转
AB28F200BR-T80 PDF预览

AB28F200BR-T80

更新时间: 2024-02-10 17:14:55
品牌 Logo 应用领域
英特尔 - INTEL 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
36页 438K
描述
2-MBIT (128K X 16, 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY

AB28F200BR-T80 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:SOIC包装说明:0.525 X 1.110 INCH, PLASTIC, SOP-44
针数:44Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.69Is Samacsys:N
最长访问时间:80 ns其他特性:USER CONFIGURABLE 5V OR 12V VPP; DEEP POWER DOWN; TOP BOOT BLOCK; HARDWARE WRITE PROTECT
备用内存宽度:8启动块:TOP
命令用户界面:YES数据轮询:NO
JESD-30 代码:R-PDSO-G44JESD-609代码:e0
长度:28.2 mm内存密度:2097152 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:1,2,1,1
端子数量:44字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:256KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP44,.63封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
电源:5 V编程电压:5 V
认证状态:Not Qualified座面最大高度:2.95 mm
部门规模:16K,8K,96K,128K最大待机电流:0.00001 A
子类别:Flash Memories最大压摆率:0.07 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:MOS温度等级:AUTOMOTIVE
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
切换位:NO类型:NOR TYPE
宽度:13.3 mmBase Number Matches:1

AB28F200BR-T80 数据手册

 浏览型号AB28F200BR-T80的Datasheet PDF文件第2页浏览型号AB28F200BR-T80的Datasheet PDF文件第3页浏览型号AB28F200BR-T80的Datasheet PDF文件第4页浏览型号AB28F200BR-T80的Datasheet PDF文件第5页浏览型号AB28F200BR-T80的Datasheet PDF文件第6页浏览型号AB28F200BR-T80的Datasheet PDF文件第7页 
ADVANCE INFORMATION  
E
A28F200BR-T/B  
2-MBIT (128K X 16, 256K X 8)  
SmartVoltage BOOT BLOCK  
FLASH MEMORY FAMILY  
Automotive  
Intel SmartVoltage Technology  
5V or 12V Program/Erase  
Automated Word/Byte Program and  
Block Erase  
Industry-Standard Command User  
5V Read Operation  
Interface  
Status Registers  
Erase Suspend Capability  
Very High Performance Read  
80 ns Max. Access Time,  
40 ns Max. Output Enable Time  
SRAM-Compatible Write Interface  
Low Power Consumption  
Maximum 65 mA Read Current at 5V  
Automatic Power Savings Feature  
1 mA Typical ICC Active Current in  
Static Operation  
x8/x16-Selectable Input/Output Bus  
High Performance 16- or 32-bit  
CPUs  
Reset/Deep Power-Down Input  
0.2 µA ICCTypical  
Optimized Array Blocking Architecture  
One 16-KB Protected Boot Block  
Two 8-KB Parameter Blocks  
One 96-KB Main Block  
Provides Reset for Boot Operations  
Hardware Data Protection Feature  
Program/Erase Lockout during  
Power Transitions  
One 128-KB Main Block  
Top or Bottom Boot Locations  
Industry-Standard Surface Mount  
Packaging  
Hardware-Protection for Boot Block  
44-Lead PSOP: JEDEC ROM  
Compatible  
Software EEPROM Emulation with  
Parameter Blocks  
ETOX™ IV Flash Technology  
Automotive Temperature Operation  
-40°C to +125°C  
Extended Cycling Capability  
30,000 Block Erase Cycles for  
Parameter Blocks  
1,000 Block Erase Cycles for Main  
Blocks  
April 1997  
Order Number: 290542-003  

与AB28F200BR-T80相关器件

型号 品牌 描述 获取价格 数据表
AB28F200BX-B90 INTEL 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY

获取价格

AB28F200BX-T90 INTEL 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY

获取价格

AB28F400B5B80 INTEL 5 VOLT BOOT BLOCK FLASH MEMORY

获取价格

AB28F400B5T80 INTEL 5 VOLT BOOT BLOCK FLASH MEMORY

获取价格

AB28F400BR-B80 NUMONYX Flash, 512KX8, 80ns, PDSO44, 0.525 X 1.110 INCH, PLASTIC, SOP-44

获取价格

AB28F400BR-B80 INTEL Flash, 512KX8, 80ns, PDSO44, 0.525 X 1.110 INCH, PLASTIC, SOP-44

获取价格