Datasheet > AB081Q60W

AB081Q60W

更新时间： 2024-11-20 01:16:31

品牌	Logo	应用领域
ROITHNER		/
页数	文件大小	规格书
3页	177K
描述
High Power Single Bar QCW Infrared Laser Diode

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中文翻译

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AB081Q60W 数据手册

AB081Q100W

TECHNICAL DATA

High Power Single Bar QCW Infrared Laser Diode

Features

Applications

•

Output Power: 100 W

780-830 nm Emission Wavelength

Spectral Width: ≤3 nm

•

Laser Pumping

Medical Usage

Printing

High Reliability, High Efficiency

Specifications (25°C)

Item

Optical Specifications

QCW Output Power

Array Length

Center Wavelength

Wavelength Tolerance

Spectral Width

Symbol

Value

Unit

P_O

λ_C

100

780-830

± 5

≤ 3

80 x 1

100

µm

Δλ

W x H

Emitting Area

Emitter Pitch

Number of Emitters

Wavelength Temperature Coefficient

Beam Divergence

100

0.3

40x8

nm/°C

deg

θ_┴×θ_║

Electrical Specifications

Slope Efficiency

Conversion Efficiency

Threshold Current

Operating Current

Operating Voltage

E_S

N_S

I_TH

I_F

≥ 1

≥ 40%

≤ 20

≤ 100

≤ 2

W/A

U_F

Absolute Maximum Ratings

Reverse Voltage

Operating Temperature

Storage Temperature

U_R

T_OP

T_STG

2.5

+10 … +40

-40 ... +85

°C

20.09.2010

AB081Q100W

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