Datasheet > AAT9123IAS-B1

AAT9123IAS-B1

更新时间： 2024-09-18 22:10:59

品牌	Logo	应用领域
ANALOGICTECH		/
页数	文件大小	规格书
4页	258K
描述
30V N-Channel Power MOSFET

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AAT9123IAS-B1 数据手册

AAT9123

30V N-Channel Power MOSFET

™

PWMSwitch

General Description

Features

The AAT9123 30V N-Channel Power MOSFET is a

member of AnalogicTech's TrenchDMOS™ prod-

uct family. Using the ultra-high density proprietary

TrenchDMOS technology, this product demon-

strates high power handling and small size.

•

V_DS(MAX)= 30V

I_D(MAX)= 10A @ 25°C

Low R_DS(ON)

•

13.5 mΩ @V_GS= 10V

20 mΩ @ V_GS= 4.5V

Applications

SOP8 Package

•

DC-DC converters for mobile CPUs

Battery-powered portable equipment

High power density DC-DC converters

Point-of-use Power Supplies

Top View

Absolute Maximum Ratings (T_A=25°C unless otherwise noted)

Symbol

Description

Value

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

T_A= 25°C

T_A= 70°C

I_D

Continuous Drain Current @ T_J=150°C

I_DM

I_S

Pulsed Drain Current

Continuous Source Current (Source-Drain Diode)

2.25

2.5

1.6

T_A= 25°C

T_A= 70°C

Operating Junction and Storage Temperature Range

P_D

Maximum Power Dissipation

T_J, T_STG

-55 to 150

°C

Thermal Characteristics

Symbol

Description

Value

Units

R_θJA

R_θJC

Maximum Junction-to-Ambient

Maximum Junction-to-Case

°C/W

Note 1: Mounted on 1” x 1” FR4 Copper Board. 10 sec pulse width.

9123.2001.12.0.9

12 3 4

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