Datasheet > AAT9060

AAT9060

更新时间： 2024-02-20 04:48:37

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ANALOGICTECH		/
页数	文件大小	规格书
6页	135K
描述
30V N-Channel Power MOSFET

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AAT9060 数据手册

AAT9060

30V N-Channel Power MOSFET

™

PWMSwitch

General Description

Features

The AAT9060 30V N-Channel Power MOSFET is a

member of AnalogicTech™'s TrenchDMOS™

product family. Using the ultra-high density propri-

etary TrenchDMOS technology, this product

demonstrates high power handling and small size.

•

V_DS(MAX)= 30V

I_D(MAX)= 39A @ T_C= 25°C

I_APP(MAX)= 12.5A in typical computer application

Low R_DS(ON)

•

16 mΩ @V_GS= 10V

27 mΩ @V_GS= 4.5V

Applications

DPAK Package

•

DC-DC converters

High current load switches

LDO output

Drain-Connected Tab

Absolute Maximum Ratings (T_C=25°C unless otherwise noted)

Symbol

Description

Drain-Source Voltage

Gate-Source Voltage

Value

Units

V_DS

V_GS

±20

±39

±31

±60

T_C= 25°C

T_C= 70°C

I_D

Continuous Drain Current @ T_J=150°C

I_DM

I_S

Pulsed Drain Current

Continuous Source Current (Source-Drain Diode)

T_C= 25°C

T_C= 70°C

P_D

Maximum Power Dissipation

T_J, T_STG

Operating Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Symbol

Description

Value

Units

R_θJA

R_TYP

R_θJC

Maximum Junction-to-Ambient

Typical Junction to ambient on PC board

Maximum Junction-to-Case

°C/W

9060.2003.05.0.9

12 3 4 5 6

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