Datasheet > AAT7126

AAT7126

更新时间： 2024-09-25 23:16:15

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ANALOGICTECH		/
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4页	121K
描述
30V N-Channel Power MOSFET

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AAT7126 数据手册

AAT7126

30V N-Channel Power MOSFET

General Description

Features

The AAT7126 30V N-Channel Power MOSFET is a

member of AnalogicTech™'s TrenchDMOS™

product family. Using the ultra-high density propri-

etary TrenchDMOS technology, this product

demonstrates high power handling and small size.

•

V_DS(MAX)= 30V

I_D(MAX)= 6.8A @ 25°C

Low R_DS(ON)

•

26 mΩ @V_GS= 10V

41 mΩ @ V_GS= 4.5V

Dual SOP-8 Package

Applications

•

Battery-powered portable equipment

Laptop computers

Top View

D1 D1 D2 D2

Desktop computers

DC/DC converters

S1 G1 S2 G2

Absolute Maximum Ratings (T_A=25°C unless otherwise noted)

Symbol

Description

Drain-Source Voltage

Gate-Source Voltage

Value

±20

Units

V_DS

V_GS

T_A= 25°C

T_A= 70°C

±6.8

±5.4

±24

1.7

I_D

Continuous Drain Current @ T_J=150°C

I_DM

I_S

Pulsed Drain Current

Continuous Source Current (Source-Drain Diode)

T_A= 25°C

T_A= 70°C

Operating Junction and Storage Temperature Range

2.0

1.25

-55 to 150

P_D

Maximum Power Dissipation

T_J, T_STG

°C

Thermal Characteristics

Symbol

Description

Value

Units

R_θJA

R_θJA2

R_ΘJC

Typical Junction-to-Ambient steady state, one FET on

Industry Standard Junction-to-Ambient Figure, t < 10 sec.

Typical Junction-to-Case, one FET on

100

62.5

°C/W

7126.2002.10.0.9

12 3 4

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