Datasheet > A9451

A9451

更新时间： 2024-10-15 18:09:35

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1157K
描述
P-Channel MOSFET

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中文翻译

获取价格

数据手册

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A9451 数据手册

SMD Type

MOSFET

P-Channel MOSFET

A9451

■ Features

● V^{DS (V)}=-20V

1.70 0.1

● ID =-2.3A (VGS =±12V)

● R^DS(ON)＜ 0.135Ω (VGS =-4.5V)

● R^DS(ON)＜0.240Ω (VGS =-2.5V)

● Marking: A9451

0.42 0.1

0.46 0.1

1.Gate

2.Drain

3.Source

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

-20

Unit

VDS

Gate-Source Voltage

±12

Continuous Drain Current

Power Dissipation

-2.3

0.5

Thermal Resistance.Junction- to-Ambient

Junction Temperature

thJA

250

℃/W

150

℃

Junction Storage Temperature Range

stg

-55 to +150

■ Electrical Characteristics Ta = 25℃

Parameter

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

Gate Threshold Voltage

Symbol

Test Conditions

=10μA, VGS=0V

Min

Typ

Max

Unit

DSS

-20

-0.5

2.3

DSS

GSS

DS=-20V, VGS=0V

-1

μA

DS=0V, VGS=±12V

±100

-1.50

0.135

0.240

GS(th)

DS=VGS , ID=-250mA

GS=-4.5V, I

GS=-2.5V, I

=-2.3A

=-1.0A

Static Drain-Source On-Resistance¹

RDS(On)

Forward Transconductance¹

Input Capacitance

iss

oss

rss

d(on)

DS=-5V, I

D=-2.3A

430

GS=0V, VDS=-20V, f=1MHz

Output Capacitance

100

Reverse Transfer Capacitance

Turn-On DelayTime^1,2

Turn-On Rise Time²

Turn-Off DelayTime²

Turn-Off Fall Time²

GS=-5V, VDS=-10V, RL=3.3Ω,

=-1A,RGEN=10Ω

d(off)

Maximum Body-Diode Continuous Current

-1

Diode Forward Voltage¹

=-1A,VGS=0V

-1.6

NOTES: 1. Pulse Test ; Pulse Width ≤300μs, Duty Cycle ≤2%.

2. These parameters have no way to verify.

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