Datasheet > A92C

A92C

更新时间： 2024-09-21 04:08:35

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
2页	205K
描述
Transistor

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中文翻译

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数据手册

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A92C 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

A92 TRANSISTOR (PNP)

TO-92

FEATURES

1.EMITTER

2.BASE

High voltage

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

3.COLLECTOR

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-300

-5

Units

Collector-Base Voltage

1 2 3

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-500

625

P_C

T_j

150

℃

T_stg

Storage Temperature

-55-150

200

℃

R_ӨJA

R_ӨJC

Thermal Resistance, junction to Ambient

Thermal Resistance, unction to Case

℃/mW

83.3

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

MIN

-300

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=-100uA, I_E=0

I_C=-1mA, I_B=0

I_E=-100μA, I_C=0

V_CB= -200 V I_E=0

V_EB= -5 V, I_C=0

-0.25

-0.1

μA

Emitter cut-off current

I_EBO

h_FE(1)

V_CE= -10 V, IC=- 1 mA

V_CE= -10V, I_C= -10 mA

V_CE= -10 V, I_C= -80 mA

I_C= -20 mA, IB= -2 mA

DC current gain

h_FE(2)

250

h_FE(3)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

-0.2

-0.9

V_CE= -20 V, IC= -10 mA

f = 30MHz

MHz

CLASSIFICATION OF h_FE(2)

Rank

B₁

B₂

150-200

Range

80-100

100-150

200-250

中文翻译

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