Datasheet > A733P(TO-92)

A733P(TO-92)

更新时间： 2022-12-02 00:11:21

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	298K
描述
Transistor

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A733P(TO-92) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

TO-92

A733 TRANSISTOR (PNP)

1. EMITTER

2. COLLECTOR

3. BASE

FEATURE

Power dissipation

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-60

Unit

Collector-Base Voltage

-50

Collector-Emitter Voltage

Emitter-Base Voltage

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-100

250

℃

P_C

T_J

150

T_stg

Junction and Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

-60

-50

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= -50uA,I_E=0

I_C= -1mA , I_B=0

I_E= -50uA, I_C=0

V_CB= -60V, I_E=0

V_EB= -5 V, I_C=0

-0.1

600

Emitter cut-off current

I_EBO

DC current gain

h_FE

V_CE= -6V, I_C= -1mA

I_C= -100mA, I_B=- 10mA

V_CE=-6V,I_C=-1.0mA

200

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

-0.18

-0.62

-0.3

-0.68

-0.58

100

Transition frequency

_CE=-6V,I_C=-10mA

MHz

f_T

Collector output capacitance

V_CB=-10V,I_E=0,f=1MH_Z

C_ob

V_CE=-6V,I_C=-0.3mA,

Noise figure

Rg=10kΩ,f=100H_Z

CLASSIFICATION OF h_FE

Rank

Range

90-180

135-270

200-400

300-600

A,May,2011

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