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A733LT1H PDF预览

A733LT1H

更新时间: 2024-02-15 02:59:33
品牌 Logo 应用领域
JCST 晶体晶体管光电二极管
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A733LT1H 数据手册

 浏览型号A733LT1H的Datasheet PDF文件第2页 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
SOT-23 Plastic-Encapsulate Transistors  
SOT23  
1. BASE  
A733LT1  
TRANSISTORPNP )  
2. EMITTER  
3. COLLECTOR  
FEATURES  
Power dissipation  
PCM : 0.2  
WTamb=25℃)  
2.4  
1.3  
Collector current  
ICM : -0.15  
A
Collector-base voltage  
V(BR)CBO : -60  
V
Operating and storage junction temperature range  
TJTstg: -55to +150℃  
Unit : mm  
ELECTRICAL CHARACTERISTICSTamb=25℃  
unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
MIN  
-60  
-50  
-5  
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Ic= -5 μA IE=0  
IC= -1 mA , IB=0  
IE= -50 μAIC=0  
VCB= -60 V , IE=0  
VEB= -5 V , IC=0  
VCE= -6 V, IC= -1mA  
IC= -100mA, IB=- 10mA  
V
V
-0.1  
-0.1  
475  
-0.3  
μA  
μA  
Emitter cut-off current  
IEBO  
DC current gain  
HFE1)  
120  
50  
Collector-emitter saturation voltage  
VCE(sat)  
-0.18  
V
VCE= -6 V, IC=-10mA  
f = 30MHz  
Transition frequency  
MHz  
f
T
CLASSIFICATION OF HFE(1)  
Rank  
L
H
Range  
120-200  
200-475  
MARKING  
CS  

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