Datasheet > A733

A733

更新时间： 2024-11-26 08:43:11

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	366K
描述
PNP Plastic-Encapsulated Transistor

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中文翻译

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数据手册

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A733 数据手册

A733

-0.1A , -60V

PNP Plastic-Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

TO-92

FEATURES

ꢀ

Power Dissipation

1Emitter

2Collector

3Base

CLASSIFICATION OF h_FE

Millimeter

Product-Rank

A733-R

A733-Q

A733-P

A733-K

REF.

Min.

4.40

4.30

12.70

3.30

0.36

Max.

4.70

3.81

0.56

0.51

Range

90~180

135~270

200~400

300~600

1.27 TYP.

1.10

2.42

0.36

2.66

0.76

Collector

Base

Emitter

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

V_CBO

V_CEO

V_EBO

I_C

-60

-50

-5

Collector Current - Continuous

Collector Power Dissipation

Junction, Storage Temperature

-100

°C

P_D

250

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ. Max.

Unit

Test Conditions

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut-Off Current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

-60

I_C= -50µA, I_E=0

-50

I_C= -1mA, I_B=0

-5

I_E= -50µA, I_C=0

-0.1

600

-0.3

-0.68

µA

V_CB= -60V, I_E=0

V_EB= -5V, I_C=0

Emitter Cut-Off Current

I_EBO

200

-0.18

-0.62

DC Current Gain

h_FE

V_CE= -6V, I_C= -1mA

I_C= -100mA, I_B= -10mA

V_CE= -6V, I_C= -1mA

Collector to Emitter Saturation Voltage

Base to Emitter Voltage

V_CE(sat)

V_BE

-0.58

100

Transition Frequency

f_T

MHz V_CE= -6V, I_C= -10mA

Collector Output Capacitance

C_ob

V_CB= -10V, I_E=0, f=1MHz

V_CE= -6V, I_C= -0.3mA, f=100Hz,

R_G=10KΩ

Noise Figure

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

04-Mar-2011 Rev. D

Page 1 of 2

中文翻译

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