Datasheet > A64S16161

A64S16161

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
联笙电子 - AMICC		/
页数	文件大小	规格书
16页	231K
描述
2M X 16 Bit Low Voltage Super RAM

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数据手册

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A64S16161 数据手册

A64S16161

Preliminary

2M X 16 Bit Low Voltage Super RAM

Features

● Memory Cell : Dynamic memory( DRAM )

● Refresh: Completely free

● Power Down: Control by CS2( No Data Retention )

● Byte Control : Capable of single byte operation

● Power Consumption: 100μA( Standby Current )

● Operating Temperature Range: -40’C~+85’C

● Composition:2,097,152 Word X 16 Bit

● Supply Power Voltage:2.70V to 3.30V

● Access Time: 70nS

LB#

DQ8

DQ9

VSS

VCC

DQ14

DQ15

A18

OE#

UB#

DQ10

DQ11

DQ12

DQ13

A19

CE2

DQ0

DQ2

VCC

VSS

DQ6

DQ7

A20

CE1#

DQ1

DQ3

DQ4

DQ5

WE#

A11

● Access Time ( Page Access Read ): 30nS

● I/O Terminal :Input / Output Common 3-state output

A17

Pin Description

A16

A15

A13

A10

Pin Name

CS1#

CS2

Description

Chip select 1 ( Low Active )

Chip select 2 ( High Active )

Write enable ( Low Active )

Output enable ( Low Active )

Address Input ( A0 to A2 : Page Address)

Lower Byte Input / Output

Upper Byte Input / Output

Lower Byte Control ( Low Active )

Upper Byte Control ( Low Active )

Power Supply

A14

A12

WE#

OE#

A0 to A20

IO0-7

IO8-15

LB#

UB#

VCC

VSS

Ground ( 0V)

Description

A64S16161 is a virtually static RAM, which uses DRAM type memory cells, but it has refresh transparency, so that you need

not to imply refresh operation. Furthermore the interface is completely compatible to a low power Asynchronous type SRAM, you

can operate as same as the Asynchronous SRAM.

A64S16161 is a 2,097,152 Words X 16 bit asynchronous random access memory on a monolithic CMOS chip with

marvelous low power consumption technology. Its low power and also low noise makes it ideal for mobile applications.

PRELIMINARY (December, 2003, Version 0.0)

AMIC Technology Corp.

12 3 4 5 6 7...16

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