A64S16161
Preliminary
2M X 16 Bit Low Voltage Super RAM
Features
● Memory Cell : Dynamic memory( DRAM )
● Refresh: Completely free
1
2
3
A0
4
5
6
● Power Down: Control by CS2( No Data Retention )
● Byte Control : Capable of single byte operation
● Power Consumption: 100μA( Standby Current )
● Operating Temperature Range: -40’C~+85’C
● Composition:2,097,152 Word X 16 Bit
● Supply Power Voltage:2.70V to 3.30V
● Access Time: 70nS
LB#
DQ8
DQ9
VSS
VCC
DQ14
DQ15
A18
OE#
UB#
DQ10
DQ11
DQ12
DQ13
A19
A8
A1
A2
CE2
DQ0
DQ2
VCC
VSS
DQ6
DQ7
A20
A
B
C
D
E
A3
A4
CE1#
DQ1
DQ3
DQ4
DQ5
WE#
A11
A5
A6
A7
● Access Time ( Page Access Read ): 30nS
● I/O Terminal :Input / Output Common 3-state output
A17
NC
Pin Description
A16
A15
A13
A10
Pin Name
CS1#
CS2
Description
Chip select 1 ( Low Active )
Chip select 2 ( High Active )
Write enable ( Low Active )
Output enable ( Low Active )
Address Input ( A0 to A2 : Page Address)
Lower Byte Input / Output
Upper Byte Input / Output
Lower Byte Control ( Low Active )
Upper Byte Control ( Low Active )
Power Supply
A14
A12
A9
F
WE#
G
H
OE#
A0 to A20
IO0-7
IO8-15
LB#
UB#
VCC
VSS
Ground ( 0V)
Description
A64S16161 is a virtually static RAM, which uses DRAM type memory cells, but it has refresh transparency, so that you need
not to imply refresh operation. Furthermore the interface is completely compatible to a low power Asynchronous type SRAM, you
can operate as same as the Asynchronous SRAM.
A64S16161 is a 2,097,152 Words X 16 bit asynchronous random access memory on a monolithic CMOS chip with
marvelous low power consumption technology. Its low power and also low noise makes it ideal for mobile applications.
PRELIMINARY (December, 2003, Version 0.0)
1
AMIC Technology Corp.