Datasheet > A5M35TG140-TC

A5M35TG140-TC

更新时间： 2024-10-31 17:00:51

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
18页	351K
描述
Airfast Power Amplifier Module, 3400-3600 MHz, 30 dB, 10.5 W Avg

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A5M35TG140-TC 数据手册

A5M35TG140- TC

Airfast Power Amplifier Module

Rev. 2 — 19 October 2023

Product data sheet

The A5M35TG140- TC is a fully integrated Doherty power amplifier module

designed for wireless infrastructure applications that demand high

performance in the smallest footprint. Ideal for applications in massive MIMO

systems, outdoor small cells and low power remote radio heads. The

field- proven LDMOS and GaN on SiC power amplifiers are designed for TDD

LTE and 5G systems.

A5M35TG140- TC

3400–3600 MHz

3400–3600 MHz, 30 dB, 10.5 W Avg.

AIRFAST POWER AMPLIFIER

MODULE



Typical LTE Performance: P_out= 10.5 W Avg., V_DC1= V_DP1= 5 Vdc,

_DC2= V_DP2= 48 Vdc, 1  20 MHz LTE, Input Signal PAR = 8 dB

@ 0.01% Probability on CCDF. ⁽¹⁾

Carrier Center

Frequency

Gain

(dB)

ACPR

(dBc)

PAE

(%)

3410 MHz

3500 MHz

3590 MHz

30.5

30.4

–27.6

–30.2

–32.8

46.7

47.5

47.9

1. All data measured with device soldered to NXP reference circuit.

Features



2- stage module solution that includes an LDMOS integrated circuit as a

driver and a GaN final stage amplifier

14 mm  10 mm Module



Advanced high performance in- package Doherty

Thermal path is separated from electrical/solder connection path for

enhanced thermal dissipation



Fully matched (50 ohm input/output, DC blocked)

Designed for low complexity digital linearization systems

Reduced memory effects for improved linearized error vector magnitude

12 3 4 5 6 7...18

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