Datasheet > A5G38H055N

A5G38H055N

更新时间： 2024-11-19 17:01:15

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
11页	192K
描述
Airfast RF Power GaN Transistor, 3700–3980 MHz, 7.6 W Avg., 48 V

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A5G38H055N 数据手册

A5G38H055N

Airfast RF Power GaN Transistor

Rev. 1 — March 2023

Data Sheet: Technical Data

This 7.6 W asymmetrical Doherty RF power GaN transistor is designed for

cellular base station applications requiring very wide instantaneous bandwidth

capability covering the frequency range of 3700 to 3980 MHz.

This part is characterized and performance is guaranteed for applications

operating in the 3700 to 3980 MHz band. There is no guarantee of performance

when this part is used in applications designed outside of these frequencies.

A5G38H055N

3700–3980 MHz

 Typical Doherty Single−Carrier W−CDMA Reference Circuit Performance:

V_DD= 48 Vdc, I_DQA= 45 mA, V_GSB= –3.9 Vdc, P_out= 7.6 W Avg., Input

Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.⁽¹⁾

3700–3980 MHz, 7.6 W Avg., 48 V

AIRFAST RF POWER GaN

TRANSISTOR

Output PAR

(dB)

ACPR

(dBc)

Frequency

3700 MHz

3840 MHz

3980 MHz

(dB)

14.7

14.9

14.7

(%)

55.5

53.2

53.0

8.5

8.2

–29.5

–35.0

–33.4

1. All data measured in reference circuit with device soldered to printed circuit board.

Features

 High terminal impedances for optimal broadband performance

 Improved linearized error vector magnitude with next generation signal

DFN 7 y 6.5

PLASTIC

 Able to withstand extremely high output VSWR and broadband operating

conditions

 Designed for low complexity linearization systems

 Optimized for massive MIMO active antenna systems for 5G base stations

DSA

GSA

N.C.

GSB

DSB

(Top View)

Note: Exposed backside of the package is

the source terminal for the transistor.

Figure 1. Pin Connections

NXP reserves the right to change the detail specifications as may be required to permit

improvements in the design of its products.

12 3 4 5 6 7...11

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