Datasheet > A5G35H110N

A5G35H110N

更新时间： 2024-10-02 15:19:15

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
16页	407K
描述
Airfast RF Power GaN Transistor, 3300–3700 MHz, 15.1 W Avg., 48 V

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A5G35H110N 数据手册

A5G35H110N

Airfast RF Power GaN Amplifier

Rev. 2 — 18 October 2023

Product data sheet

1 General description

This 15.1 W asymmetrical Doherty RF power GaN amplifier is designed for cellular base station applications

requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3700 MHz.

This part is characterized and performance is guaranteed for applications operating in the 3300 to 3700 MHz

band. There is no guarantee of performance when this part is used in applications designed outside of these

frequencies.

2 Features and benefits

• High terminal impedances for optimal broadband performance

• Improved linearized error vector magnitude with next generation signal

• Able to withstand extremely high output VSWR and broadband operating conditions

• Designed for low complexity linearization systems

• Optimized for massive MIMO active antenna systems for 5G base stations

3 Typical performance

Table 1.ꢀ3500 MHz — Typical Doherty single−carrier W−CDMA reference circuit performance

V_DD= 48 Vdc, I_DQA= 70 mA, V_GSB= –4.1 Vdc, P_out= 15.1 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on

CCDF.^[1]

G_ps

η_D

Output PAR

(dB)

ACPR

(dBc)

Frequency

3300 MHz

3400 MHz

3500 MHz

3600 MHz

3700 MHz

(dB)

(%)

14.8

15.4

15.8

14.9

57.6

55.7

54.0

54.3

7.5

7.8

8.0

7.8

7.4

–27.9

–29.3

–30.8

–31.1

–31.0

[1] All data measured with device soldered to NXP reference circuit.

12 3 4 5 6 7...16

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