Datasheet > A5G26S004N

A5G26S004N

更新时间： 2024-10-02 17:01:03

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
16页	445K
描述
Airfast RF Power GaN Transistor, 2300–2690 MHz, 24 dBm Avg., 48 V

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A5G26S004N 数据手册

A5G26S004N

Airfast RF Power GaN Transistor

Rev. 5 — 18 October 2023

Product data sheet

1 General description

This 24 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency

range of 2300 to 2690 MHz.

2 Features and benefits

• High terminal impedances for optimal broadband performance

• Designed for low complexity linearization systems

• Universal broadband driver

• Optimized for massive MIMO active antenna systems for 5G base stations

3 Typical performance

Table 1.ꢀ2600 MHz — Typical single-carrier W-CDMA reference circuit performance

V_DD= 48 Vdc, I_DQ= 10 mA, P_out= 24 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.^[1]

G_ps

η_D

Output PAR

(dB)

ACPR

(dBc)

Frequency

2515 MHz

2595 MHz

2675 MHz

(dB)

(%)

18.7

19.6

18.9

18.8

20.5

20.6

10.2

9.8

–39.6

–42.0

–44.7

9.7

[1] All data measured with device soldered to NXP reference circuit.

12 3 4 5 6 7...16

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