Datasheet > A5G26H605W19N

A5G26H605W19N

更新时间： 2024-11-19 15:19:47

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
11页	198K
描述
Airfast RF Power GaN Transistor, 2496–2690 MHz, 85 W Avg., 48 V

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A5G26H605W19N 数据手册

A5G26H605W19N

Airfast RF Power GaN Transistor

Rev. 1 — 21 December 2023

Product data sheet

This 85 W asymmetrical Doherty RF power GaN transistor is designed for

cellular base station applications requiring very wide instantaneous bandwidth

capability covering the frequency range of 2496 to 2690 MHz.

This part is characterized and performance is guaranteed for applications

operating in the 2496 to 2690 MHz band. There is no guarantee of performance

when this part is used in applications designed outside of these frequencies.

A5G26H605W19N

2600 MHz

• Typical Doherty Single−Carrier W−CDMA Reference Circuit Performance:

V_DD= 48 Vdc, I_DQA= 300 mA, V_GSB= –5.4 Vdc, P_out= 85 W Avg., Input

Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.⁽¹⁾

2496–2690 MHz, 85 W Avg., 48 V

AIRFAST RF POWER GaN

TRANSISTOR

Output PAR

(dB)

ACPR

(dBc)

Frequency

2620 MHz

2655 MHz

2690 MHz

(dB)

15.1

15.3

15.0

(%)

52.5

52.3

52.1

8.4

8.2

8.1

–30.0

–31.0

–32.0

1. All data measured with device soldered to NXP reference circuit.

Features

OM−780−4S4S

PLASTIC

• High terminal impedances for optimal broadband performance

• Advanced high performance in−package Doherty

• Improved linearized error vector magnitude with next generation signal

• Able to withstand extremely high output VSWR and broadband operating

conditions

VBW /V

VBW

inA GSA

outA

Carrier

• Plastic package

RF /V

inA GSA

7 RF /V

outA DSA

RF /V

inB GSB

6 RF /V

outB DSB

Peaking

NC 4

5 NC

(Top view)

Note: Exposed backside of the package is

the source terminal for the transistor.

Figure 1. Pin Connections

12 3 4 5 6 7...11

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