Datasheet > A5G19H605W19N

A5G19H605W19N

更新时间： 2024-11-18 18:09:59

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	485K
描述
Airfast RF Power GaN Transistor, 1930–1995 MHz, 85 W Avg., 48 V

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A5G19H605W19N 数据手册

A5G19H605W19N

Airfast RF Power GaN Transistor

Rev. 1 — 20 March 2024

Product data sheet

1 General description

This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications

requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1995 MHz.

This part is characterized and performance is guaranteed for applications operating in the 1930 to 1995 MHz band.

There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

2 Features and benefits

• High terminal impedances for optimal broadband performance

• Advanced high performance in-package Doherty

• Improved linearized error vector magnitude with next generation signal

• Able to withstand extremely high output VSWR and broadband operating conditions

• Plastic package

3 Typical performance

Table 1. 1900 MHz — Typical Doherty single-carrier W-CDMA production test fixture performance

_DD= 48 Vdc, I_DQA= 300 mA, V_GSB= –5.0 Vdc, P_out= 85 W Avg., input signal PAR = 9.9 dB @ 0.01% probability on CCDF^[1]

G_ps

(dB)

η_D

(%)

Output PAR

(dB)

ACPR

(dBc)

Frequency

1930 MHz

1960 MHz

1995 MHz

16.3

16.7

17.0

54.3

55.1

55.7

8.9

8.6

8.2

–29.2

–30.2

–31.2

[1] All data measured with device soldered to NXP production test fixture.

12 3 4 5 6 7...15

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