Datasheet > A5G08H800W19N

A5G08H800W19N

更新时间： 2024-10-31 15:19:51

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
11页	217K
描述
Airfast RF Power GaN Transistor, 865–960 MHz, 112 W Avg., 50 V

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A5G08H800W19N 数据手册

A5G08H800W19N

Airfast RF Power GaN Transistor

Rev. 1 — 21 December 2023

Product data sheet

This 112 W asymmetrical Doherty RF power GaN transistor is designed for

cellular base station applications requiring very wide instantaneous bandwidth

capability covering the frequency range of 865 to 960 MHz.

This part is characterized and performance is guaranteed for applications

operating in the 865 to 960 MHz band. There is no guarantee of performance

when this part is used in applications designed outside of these frequencies.

A5G08H800W19N

900 MHz

865–960 MHz, 112 W Avg., 50 V

AIRFAST RF POWER GaN

TRANSISTOR

• Typical Doherty Single−Carrier W−CDMA Production Test Fixture Performance:

V_DD= 50 Vdc, I_DQA= 350 mA, V_GSB= –5 Vdc, P_out= 112 W Avg., Input

Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.⁽¹⁾

Output PAR

(dB)

ACPR

(dBc)

Frequency

865 MHz

913 MHz

960 MHz

(dB)

19.3

19.5

19.1

(%)

60.5

59.9

58.7

8.8

8.6

8.3

–28.0

–28.8

–30.5

1. All data measured with device soldered to NXP production test fixture.

OM−780−4S4S

PLASTIC

Features

• High terminal impedances for optimal broadband performance

• Advanced high performance in−package Doherty

• Improved linearized error vector magnitude with next generation signal

• Able to withstand extremely high output VSWR and broadband operating

Carrier

conditions

• Plastic package

RF /V

outA DSA

inA GSA

RF /V

outB DSB

inB GSB

Peaking

(Top View)

Note: Exposed backside of the package is

the source terminal for the transistor.

Figure 1. Pin Connections

12 3 4 5 6 7...11

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