Datasheet > A3T18H400W23S

A3T18H400W23S

更新时间： 2024-04-09 19:01:47

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
16页	825K
描述
Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 71 W Avg., 28 V

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A3T18H400W23S 数据手册

Document Number: A3T18H400W23S

Rev. 0, 10/2017

NXP Semiconductors

Technical Data

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

A3T18H400W23SR6

This 71 W asymmetrical Doherty RF power LDMOS transistor is designed

for cellular base station applications requiring very wide instantaneous

bandwidth capability covering the frequency range of 1805 to 1880 MHz.

1805–1880 MHz, 71 W AVG., 28 V

AIRFAST RF POWER LDMOS

TRANSISTOR

1800 MHz



Typical Doherty Single--Carrier W--CDMA Performance: V_DD= 28 Vdc,

I_DQA= 300 mA, V_GSB= 0.7 Vdc, P_out= 71 W Avg., Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF.



Output PAR

(dB)

ACPR

(dBc)

Frequency

1805 MHz

1840 MHz

1880 MHz

(dB)

17.0

17.1

16.8

(%)

53.2

53.4

52.8

7.8

7.6

7.4

–31.0

–31.6

–32.5

Features

ACP--1230S--4L2S



Advanced high performance in--package Doherty

Designed for wide instantaneous bandwidth applications

Greater negative gate--source voltage range for improved Class C operation

Able to withstand extremely high output VSWR and broadband operating

conditions

(2)

VBW

Carrier

RF /V

outA DSA

inA GSA



Designed for digital predistortion error correction systems

(1)

RF /V

inB GSB

RF /V

outB DSB

Peaking

(2)

VBW

(Top View)

Figure 1. Pin Connections

1. Pin connections 4 and 5 are DC coupled

and RF independent.

2. Device can operate with

current

supplied through pin 3 and pin 6.

 2017 NXP B.V.

A3T18H400W23SR6

RF Device Data

NXP Semiconductors

12 3 4 5 6 7...16

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