A3213LLHLT-T

更新时间： 2024-11-04 22:26:39

品牌	Logo	应用领域
急速微 - ALLEGRO		模拟IC 信号电路光电二极管信息通信管理
页数	文件大小	规格书
11页	570K
描述
MICROPOWER, ULTRA-SENSITIVE HALL-EF FECT SWITCHES

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中文翻译

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技术参数
数据手册
替代型号

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A3213LLHLT-T 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	SOT-23
包装说明：	TSSOP,	针数：	3
Reach Compliance Code：	compliant	HTS代码：	8542.39.00.01
风险等级：	0.66	Is Samacsys：	N
模拟集成电路 - 其他类型：	ANALOG CIRCUIT	JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e3	长度：	2.98 mm
湿度敏感等级：	1	功能数量：	1
端子数量：	3	最高工作温度：	150 °C
最低工作温度：	-40 °C	封装主体材料：	PLASTIC/EPOXY
封装代码：	TSSOP	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	峰值回流温度（摄氏度）：	260
认证状态：	Not Qualified	座面最大高度：	1.13 mm
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	2.4 V
标称供电电压 (Vsup)：	3 V	表面贴装：	YES
技术：	BICMOS	温度等级：	AUTOMOTIVE
端子面层：	Matte Tin (Sn)	端子形式：	GULL WING
端子节距：	0.95 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	40	宽度：	1.91 mm
Base Number Matches：	1

A3213LLHLT-T 数据手册

3213 AND

3214

MICROPOWER, ULTRA-SENSITIVE

HALL-EFFECT SWITCHES

The A3213xx and A3214xx integrated circuits are ultra-sensitive, pole

independent Hall-effect switches with a latched digital output. They are

especially suited for operation in battery-operated, hand-held equipment such

as cellular and cordless telephones, pagers, and palmtop computers. A 2.4 volt

to 5.5 volt operation and a unique clocking scheme reduce the average oper-

ating power requirements – the A3213xx to 825 µW, the A3214xx to 14 µW

(typical at 2.75 V)! Except for operating duty cycle and average operating

current, the A3213xx and A3214xx are identical.

Package Designator ‘LH’ Pinning

(SOT23W)

Unlike other Hall-effect switches, either a north or south pole of sufficient

strength will turn the output on; in the absence of a magnetic field, the output

is off. The polarity independence and minimal power requirement allows

these devices to easily replace reed switches for superior reliability and ease of

manufacturing, while eliminating the requirement for signal conditioning.

Improved stability is made possible through chopper stabilization (dy-

namic offset cancellation), which reduces the residual offset voltage normally

caused by device overmolding, temperature dependencies, and thermal stress.

These devices include on a single silicon chip a Hall-voltage generator,

small-signal amplifier, chopper stabilization, a latch, and a MOSFET output.

Advanced BiCMOS processing is used to take advantage of low-voltage and

low-power requirements, component matching, very low input-offset errors,

and small component geometries.

Dwg. PH-016-1

Range 'E' devices are rated for operation over a temperature range of

-40°C to +85°C; range 'L' devices are rated for operation over a temperature

range of -40°C to +150°C. Two package styles provide a magnetically opti-

mized package for most applications. ‘LH’ is a miniature low-profile surface-

mount package, ‘UA’ is a three-lead SIP for through-hole mounting. Each

package is available in a lead (Pb) free version (suffix, –T) , with a 100% matte

tin plated leadframe.

Pinning is shown viewed from branded side.

ABSOLUTE MAXIMUM RATINGS

at T = +25°C

Supply Voltage, V_DD.............................. 6 V

Magnetic Flux Density, B .......... Unlimited

Output Off Voltage, V_OUT...................... 6 V

Output Current, I_OUT........................... 1 mA

Junction Temperature, T_J................ +170°C

FEATURES

■ Micropower Operation

■ Operate With North or South Pole

■ 2.4 V to 5.5 V Battery Operation

■ Chopper Stabilized

Superior Temperature Stability

Extremely Low Switch-Point Drift

Insensitive to Physical Stress

Operating Temperature Range, T_A

Suffix 'E' ...................... -40°C to +85°C

Suffix 'L' ................... -40°C to +150°C

■ ESD Protected to 5 kV

■ Solid-State Reliability

Storage Temperature Range,

T_S.............................. -65°C to +170°C

■ Small Size

Caution: These CMOS devices have input

static protection (Class 3) but are still sus-

ceptible to damage if exposed to extremely

high static electrical charges.

■ Easily Manufacturable With Magnet Pole Independence

12 3 4 5 6 7...11

中文翻译

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A3213LLHLT-T 替代型号

型号	品牌	替代类型	描述	数据表
A3213LLHLT	ALLEGRO	完全替代	MICROPOWER, ULTRA-SENSITIVE HALL-EF FECT SWITCHES
A3213ELHLT-T	ALLEGRO	类似代替	MICROPOWER, ULTRA-SENSITIVE HALL-EF FECT SWITCHES
A3213ELHLT	ALLEGRO	类似代替	MICROPOWER, ULTRA-SENSITIVE HALL-EF FECT SWITCHES

与A3213LLHLT-T相关器件

型号	品牌	获取价格	描述	数据表
A3213LUA	ALLEGRO	获取价格	MICROPOWER, ULTRA-SENSITIVE HALL-EF FECT SWITCHES
A3213LUA-LC	ALLEGRO	获取价格	暂无描述
A3213LUA-LC-T	ALLEGRO	获取价格	Sensor/Transducer, Open-drain, BICMOS, 3 Pin, Plastic/epoxy,
A3213LUA-T	ALLEGRO	获取价格	MICROPOWER, ULTRA-SENSITIVE HALL-EF FECT SWITCHES
A321-4	AMPHENOL	获取价格	Circular Connector, 21 Contact(s), Aluminum Alloy, Female, Plug,
A32140DX-1BG240C	MICROSEMI	获取价格	Field Programmable Gate Array, 1866-Cell, CMOS, PBGA240
A32140DX-1BG240C	ACTEL	获取价格	Field Programmable Gate Array, 1866 CLBs, 14000 Gates, 1866-Cell, CMOS, PBGA240, PLASTIC,
A32140DX-1BG240I	MICROSEMI	获取价格	Field Programmable Gate Array, 1866-Cell, CMOS, PBGA240
A32140DX-1BG240I	ACTEL	获取价格	暂无描述
A32140DX-1BGG225C	ACTEL	获取价格	Field Programmable Gate Array, 954 CLBs, 14000 Gates, CMOS, PBGA225, BGA-225

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