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A3213ELHLT PDF预览

A3213ELHLT

更新时间: 2024-02-14 03:26:50
品牌 Logo 应用领域
急速微 - ALLEGRO 光电二极管信息通信管理
页数 文件大小 规格书
11页 570K
描述
MICROPOWER, ULTRA-SENSITIVE HALL-EF FECT SWITCHES

A3213ELHLT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SIP
包装说明:SIP,针数:3
Reach Compliance Code:compliantHTS代码:8542.39.00.01
风险等级:0.69模拟集成电路 - 其他类型:ANALOG CIRCUIT
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
长度:4.09 mm湿度敏感等级:1
功能数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:SIP
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:5.3 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.4 V标称供电电压 (Vsup):3 V
表面贴装:NO技术:BICMOS
温度等级:AUTOMOTIVE端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子节距:1.27 mm
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:1.52 mmBase Number Matches:1

A3213ELHLT 数据手册

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3213 AND  
3214  
MICROPOWER, ULTRA-SENSITIVE  
HALL-EFFECT SWITCHES  
The A3213xx and A3214xx integrated circuits are ultra-sensitive, pole  
independent Hall-effect switches with a latched digital output. They are  
especially suited for operation in battery-operated, hand-held equipment such  
as cellular and cordless telephones, pagers, and palmtop computers. A 2.4 volt  
to 5.5 volt operation and a unique clocking scheme reduce the average oper-  
ating power requirements – the A3213xx to 825 µW, the A3214xx to 14 µW  
(typical at 2.75 V)! Except for operating duty cycle and average operating  
current, the A3213xx and A3214xx are identical.  
Package Designator ‘LH’ Pinning  
(SOT23W)  
3
Unlike other Hall-effect switches, either a north or south pole of sufficient  
strength will turn the output on; in the absence of a magnetic field, the output  
is off. The polarity independence and minimal power requirement allows  
these devices to easily replace reed switches for superior reliability and ease of  
manufacturing, while eliminating the requirement for signal conditioning.  
V
DD  
Improved stability is made possible through chopper stabilization (dy-  
namic offset cancellation), which reduces the residual offset voltage normally  
caused by device overmolding, temperature dependencies, and thermal stress.  
1
2
These devices include on a single silicon chip a Hall-voltage generator,  
small-signal amplifier, chopper stabilization, a latch, and a MOSFET output.  
Advanced BiCMOS processing is used to take advantage of low-voltage and  
low-power requirements, component matching, very low input-offset errors,  
and small component geometries.  
Dwg. PH-016-1  
Range 'E' devices are rated for operation over a temperature range of  
-40°C to +85°C; range 'L' devices are rated for operation over a temperature  
range of -40°C to +150°C. Two package styles provide a magnetically opti-  
mized package for most applications. ‘LH’ is a miniature low-profile surface-  
mount package, ‘UAis a three-lead SIP for through-hole mounting. Each  
package is available in a lead (Pb) free version (suffix, –T) , with a 100% matte  
tin plated leadframe.  
Pinning is shown viewed from branded side.  
ABSOLUTE MAXIMUM RATINGS  
at T = +25°C  
A
Supply Voltage, VDD .............................. 6 V  
Magnetic Flux Density, B .......... Unlimited  
Output Off Voltage, VOUT ...................... 6 V  
Output Current, IOUT ........................... 1 mA  
Junction Temperature, TJ ................ +170°C  
FEATURES  
Micropower Operation  
Operate With North or South Pole  
2.4 V to 5.5 V Battery Operation  
Chopper Stabilized  
Superior Temperature Stability  
Extremely Low Switch-Point Drift  
Insensitive to Physical Stress  
Operating Temperature Range, TA  
Suffix 'E' ...................... -40°C to +85°C  
Suffix 'L' ................... -40°C to +150°C  
ESD Protected to 5 kV  
Solid-State Reliability  
Storage Temperature Range,  
TS .............................. -65°C to +170°C  
Small Size  
Caution: These CMOS devices have input  
static protection (Class 3) but are still sus-  
ceptible to damage if exposed to extremely  
high static electrical charges.  
Easily Manufacturable With Magnet Pole Independence  

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