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A3212LLHLT-T PDF预览

A3212LLHLT-T

更新时间: 2024-01-23 06:02:39
品牌 Logo 应用领域
急速微 - ALLEGRO 模拟IC开关信号电路光电二极管信息通信管理
页数 文件大小 规格书
13页 381K
描述
MICROPOWER, ULTRA-SENSITIVE HALL-EF FECT SWITCH

A3212LLHLT-T 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SIP包装说明:,
针数:3Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.64
Is Samacsys:N模拟集成电路 - 其他类型:ANALOG CIRCUIT
JESD-30 代码:R-PSSO-G3JESD-609代码:e0
长度:4.105 mm功能数量:1
端子数量:3最高工作温度:150 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240认证状态:Not Qualified
座面最大高度:1.57 mm最大供电电压 (Vsup):3.5 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):2.75 V
表面贴装:YES技术:BICMOS
温度等级:AUTOMOTIVE端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.035 mmBase Number Matches:1

A3212LLHLT-T 数据手册

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A3212  
MICROPOWER, ULTRA-SENSITIVE  
HALL-EFFECT SWITCH  
The A3212 integrated circuit is an ultra-sensitive, pole independent Hall-effect  
switch with a latched digital output. This sensor is especially suited for opera-  
tion in battery-operated, hand-held equipment such as cellular and cordless  
telephones, pagers, and palmtop computers. A 2.5 volt to 3.5 volt operation and a  
unique clocking scheme reduce the average operating power requirements to less  
than 15 µW with a 2.75 volt supply.  
2 x 2 mm MLPD  
Package A3212EELLT-T  
Unlike other Hall-effect switches, either a north or south pole of sufficient  
strength will turn the output on; in the absence of a magnetic field, the output  
is off. The polarity independence and minimal power requirement allow these  
devices to easily replace reed switches for superior reliability and ease of manu-  
facturing, while eliminating the requirement for signal conditioning.  
Improved stability is made possible through chopper stabilization (dynamic off-  
set cancellation), which reduces the residual offset voltage normally caused by  
device overmolding, temperature dependencies, and thermal stress.  
This device includes on a single silicon chip a Hall-voltage generator, small-sig-  
nal amplifier, chopper stabilization, a latch, and a MOSFET output. Advanced  
BiCMOS processing is used to take advantage of low-voltage and low-power  
requirements, component matching, very low input-offset errors, and small com-  
ponent geometries.  
Approximate actual size  
Four package styles provide magnetically optimized solutions for most appli-  
cations. Miniature low-profile surface-mount package types EH and EL  
(0.75 and 0.50 mm nominal height) are leadless, LH is a leaded low-profile  
SMD, and UA is a three-lead SIP for through-hole mounting. Each package is  
available in a lead (Pb) free version (suffix, –T) with 100% matte tin plated lead-  
frame. EL package for limited release, engineering samples available.  
ABSOLUTE MAXIMUM RATINGS  
Supply Voltage, VDD .............................. 5 V  
Magnetic Flux Density, B .......... Unlimited  
Output Off Voltage, VOUT ...................... 5 V  
Output Current, IOUT ........................... 1 mA  
Junction Temperature, TJ ................ +170°C  
FEATURES  
Micropower Operation  
Operation with North or South Pole  
2.5 V to 3.5 V Battery Operation  
Operating Temperature, TA  
Range 'E-' .................... -40°C to +85°C  
Range 'L-' .................. -40°C to +150°C  
Chopper Stabilized  
Superior Temperature Stability  
Extremely Low Switch-Point Drift  
Insensitive to Physical Stress  
Storage Temperature Range,  
TS .............................. -65°C to +170°C  
ESD Protected to 5 kV  
Solid-State Reliability  
Caution: These CMOS devices have input  
static protection (Class 3) but are still sus-  
ceptible to damage if exposed to extremely  
high static electrical charges.  
Small Size  
Easily Manufacturable with Magnet Pole Independence  

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